An ideal one-dimensional
electronic system is formed along atomic
chains on Au-decorated vicinal silicon surfaces, but the nature of
its low-temperature phases has been puzzling for last two decades.
Here, we unambiguously identify the low-temperature structural distortion
of this surface using high-resolution atomic force microscopy and
scanning tunneling microscopy. The most important structural ingredient
of this surface, the step-edge Si chains, are found to be strongly
buckled, every third atom down, forming trimer unit cells. This observation
is consistent with the recent model of rehybridized dangling bonds
and rules out the antiferromagnetic spin ordering proposed earlier.
The spectroscopy and electronic structure calculation indicate a charge
density wave insulator with a
Z
3
topology,
making it possible to exploit topological phases and excitations.
The tunneling current was found to substantially lower the energy
barrier between three degenerate CDW states, which induces a dynamically
fluctuating CDW at very low temperature.