Abstract:The paper discussed the via resistance variation using different cleaning chemicals known as the amine and fluorine based chemical for 0.6um BiCMOS technology. Single and chain via resistance showed severe drift with fluorine based clean recipe especially at the wafer edge where the failure rate is approximately 28% for chain via resistance and 12% for single via resistance. The baseline chemical, amine based showed low failure rate of less than 3%. Resistance drift is mainly due to the high Ti/TiN polymer res… Show more
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