VHF CMOS integrated active inductor

Thanachayanont, A.; Payne, A.J.

doi:10.1049/el:19960669

Cited by 160 publications

(61 citation statements)

References 2 publications

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“…Several RF building blocks have consequently been successfully implemented as integrated circuits (ICs) with different technologies. In this scenario, analog tunable filters working, in general, at RF and microwave frequencies still remain the most difficult part to be integrated in a single chip [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] due to requirements in input and output impedance matching, stability, and dynamic range. In fact, most commercial wireless receivers only use off-chip filters that are typically implemented with discrete components.…”

Section: Introductionmentioning

confidence: 99%

Microwave Active Filter Design

Stornelli¹,

Pantoli²,

Leuzzi³

2017

Microwave Systems and Applications

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A simplified method for the project and design of microwave active filters is presented here. The presented design is based on the use of an active inductor that emulates an inductor behavior by implementing a passive variable phase-and amplitude-compensating network and amplifiers, forming a gyrator-C architecture. This method can be applied with success for the design of bandpass filters with very high performances in terms of integration and application from a few hundreds of MHz to tens of GHs with filter high dynamic range and frequency tuning capability.

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Section: Introductionmentioning

confidence: 99%

Microwave Active Filter Design

Stornelli¹,

Pantoli²,

Leuzzi³

2017

Microwave Systems and Applications

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“…Though the on-chip spiral inductors are good passive devices, it is difficult to realize it for larger inductance values, high quality factor and smaller chip area [1][2]. Active inductors, on the other hand, provide large inductance value with high resonance frequency, high quality factor, small chip area and wide range of tuning ability [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Low Power Low Noise Tunable Active Inductor for Narrow Band LNA Design

Manjula¹,

Malarvizhi²

2012

IJCA

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This paper presents a low power, low noise and high quality factor tunable single ended active inductor suitable for designing multiband RF front end circuits. The active inductor circuit uses differential configuration as positive transconductor and PMOS cascode structure as negative transconductor of a gyrator to reduce the noise voltage. It uses MOS transistor as a feedback resistor to provide possible negative resistance to reduce the inductor loss to enhance the quality factor. Also this structure provides wide inductive bandwidth and high resonance frequency. The tuning of center frequency and quality factor for multiband operation is achieved through the controllable current source. The center frequency tuning range of the active inductor varies from 3.9 GHz to 12.3 GHz. The designed active inductor and LNA are simulated in 180nm CMOS process using HSPICE simulation tool. Simulation results of the active inductor shows an inductive bandwidth varies from 6.45 MHz to 6.3 GHz with the center frequency 6.3 GHz. The inductance value ranges from 5nH to 550nH respectively. It has the less noise voltage of 12nV/√Hz to 5.6nV/√Hz for the designed tuning range and consumes less power of 0.65mW. The Low noise amplifier achieves the gain of 19dB, low noise figure of 2.1dB and consumes low power of 4.2mW.

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“…In this paper, two widely used active inductor circuit topologies [2,3] are analyzed using a generalized device circuit model for the transconductance elements. This approach allows us to remove transistor-specific variables such as gate-length and gate-width from the analysis and it enables us to draw a better comparison of the frequency performance of the two topologies.…”

Section: Introductionmentioning

confidence: 99%