Very small size capacitive DMTL phase shifters using a new approach

Afrang, Omid Reza; Afrang, Saeid; Hamzah, Azrul Azlan

doi:10.1007/s00542-022-05354-0

Cited by 1 publication

(1 citation statement)

References 37 publications

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“…Various radio frequency (RF) switches, such as field effective transistor (FET), ferrite-based switches, PIN diodes, lumped elements, loaded lines, and micro-electro-mechanical system (MEMS) switches, are used to achieve phase-shifting. RF MEMS switches offer low loss, low up-state capacitance, high linearity, and lower power consumption than other RF switches [1][2][3][4]. Moreover, RF MEMS switches can be easily integrated into the radio frequency integrated circuits (RFICs).…”

Section: Introductionmentioning

confidence: 99%

A Loaded Line 2-bit Phase Shifter Using RF MEMS DC/Capacitive Switches

Narang¹,

Shrivastava²,

Basu³

et al. 2023

PIER Letters

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This letter presents the fabrication and measurement of a novel loaded line phase shifter design providing four different phase shifts using only two RF MEMS switches. The flexibility of choosing DC or capacitive load depending upon the phase shift required in a single RF MEMS switch makes the phase shifter compact and requires less number of proposed switches. The RF MEMS switch has been designed to provide isolation better than 10 dB in both DC and capacitive states from 16 to 45 GHz. Due to the designed RF MEMS beam switching between DC and capacitive loading, the proposed phase shifter provides a 2-bit phase shift using only two switches. The measured phase shifter has the maximum insertion loss of 0.8 dB with a bandwidth of 8 GHz from 16 to 24 GHz. The return loss is better than 10 dB for all four states. The maximum Root-Mean-Square (RMS) insertion loss error is 0.28 dB, and the phase shift error is 0.98 • . The proposed phase shifter is fabricated using the surface micromachining on the sapphire substrate and occupies an area of 3.931 mm 2 .

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Section: Introductionmentioning

confidence: 99%