2008
DOI: 10.48550/arxiv.0811.2866
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Very simple FET amplifier with a voltage noise floor less than 1 nV/sqrt(Hz)

Luca Callegaro,
Marco Pisani,
Alessio Pollarolo

Abstract: A field-effect transistor (FET) amplifier for small voltage signals is presented. Its design is elementary and the construction can be afforded by anyone. Despite its simplicity, with a voltage noise less than 1 nV/ √ Hz, it outperforms commercially available integrated FET amplifiers. The amplifier has a gain flatness better than 1 dB over 1 MHz bandwidth; it can be employed as a front-end for signal analyzers or signal recovery systems.

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Cited by 3 publications
(7 citation statements)
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“…As an example of results, the following refers to a continuous acquisition run (the parameters of the acquisition are n = 1200 cycles, each of 2 17 points at 200 kHz sampling frequency, m N = 200, m C = 50, B = 3 kHz to 7 kHz; the calibration signal has a length of 2 16 codes with 500 kHz sampling rate). Total measurement time is 2.3 × 10 5 s (about 2.7 days).…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…As an example of results, the following refers to a continuous acquisition run (the parameters of the acquisition are n = 1200 cycles, each of 2 17 points at 200 kHz sampling frequency, m N = 200, m C = 50, B = 3 kHz to 7 kHz; the calibration signal has a length of 2 16 codes with 500 kHz sampling rate). Total measurement time is 2.3 × 10 5 s (about 2.7 days).…”
Section: Resultsmentioning
confidence: 99%
“…Amplifiers A are identical; each one is composed of two stages, giving an overall gain of ≈31 000. The first stage (see [16] for details) is a pseudo-differential, cascode FET amplifier in an open-loop configuration [11]. Its equivalent input voltage noise is ≈0.8 nV Hz −1/2 , and the bias current is 2 pA to 3 pA; the gain flatness is better than 1 dB over 1 MHz bandwidth.…”
Section: Amplifiersmentioning
confidence: 99%
“…Figure 52 shows a PA with a cascade FET transistor circuit designed for low capacitance and resistance photodetector. The transistor is in a common-source configuration [146]. This circuit eliminates the Miller effect, thus enhancing the bandwidth.…”
Section: Complex Pasmentioning
confidence: 99%
“…The overall low-frequency gain of the PA depends on feedback resistance and FET transconductance. Using an LSK 170B transistor, a low-noise voltage of 0.9 nV/Hz 1/2 was obtained [146]. To provide a wider bandwidth with unity voltage gain, it is possible to apply a source follower configuration.…”
Section: Complex Pasmentioning
confidence: 99%
“…YBRID topologies composed of discrete Junction Field Transistors (JFETs) and Operational Amplifiers (OAs) provide a simple way to implement front ends featuring both low voltage noise and low current noise, and which are able to work properly with a wide range of signal source impedances [1,2,3,4,5]. The key to this approach is that the JFET provides a low-noise front end with a gain of typically 20-30 times, thus relaxing the noise requirements for the next stage and allowing its implementation with OAs.…”
Section: Introductionmentioning
confidence: 99%