Very Shallow Trapping State in Doped Germanium

Takeuchi, Masaki; Hirano, Minoru; Narita, Shin‐ichiro

doi:10.1103/physrevlett.35.1095

Cited by 46 publications

(3 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 1 shows long-wavelength photoconductivity spectra of Sb-doped germanium under a uniaxial stress of (0-1)x 10 9 dyn/cm 2 along the [111] crystal direction at 1.5 K. The measured relative photoconductive responses are calibrated for the spectral distribution of the light source. As previously reported, 6 the submillimeter photoconductivity spectra of Ge without stress have maximum near 3 meV and were ascribed to the excitation of electrons from the trapping state to the conduction band (curve a in Fig. 1).…”

Section: Leysupporting

confidence: 81%

See 1 more Smart Citation

Uniaxial Stress Effect on the Electron Affinity of theD−State in Germanium

Narita

Takeuchi

1976

Phys. Rev. Lett.

Self Cite

View full text Add to dashboard Cite

and doctoral dissertation, University of Stuttgart, 1971 (unpub-Though many experimental results 1 " 6 associated with the impurity states in semiconductors have been ascribed to their (or A + ) states, conclusive evidence of the existence of theD~ (A + ) state has not been reported. In the submillimeter photoconductivity measurements on Ge, 6 the experimental electron affinity of the shallow trapping state, which has been supposed to be the D~ state, was about 3 times larger than the theoretical value 7 estimated by a simple analogy to H". 8 Moreover the spectral shape of the photoconductivity does not agree with the theoretical one. Even if the existence of the D" state in Ge (or Si) is assumed, the complete analogy of it with H" would not hold, because the conduction band in Ge (Si) has many-valley structure with anisotropic energy surfaces.In this Comment we wish to report a stress experiment on the long-wavelength (submillimeter plus millimeter) photoconductivity in Ge, performed in order to reduce the many-valley structure to the single-valley one. ment, we have confirmed that the mentioned discrepancy between experiment and the theory comes mainly from the effect of the many-valley structure in Ge, and we believe our results to be the first conclusive evidence for the existence of theD" states in semiconductors.The present photoconductivity measurements are performed on Sb-doped germanium crystals under uniaxial compressive stress along the [ill] crystal direction by the use of a lamellar grating spectrometer and extending the wavelength range from submillimeter to millimeter. By applying a [ill] stress, the four conductionband valleys in germanium become inequivalent in energy; that is, the energy of the valley with the principal axis of the energy ellipsoid parallel to the [111] stress direction is lowered, while the other three valleys are equally elevated in energy. Thus, under sufficient stress, the electrons in the four valleys are accumulated into the lowest [111] valley and the crystal behaves as a semiconductor with a single conduction-band val-Long-wavelength (submillimeter plus millimeter) photoconductivity measurements in doped germanium have been performed under uniaxial compressive stress along the Ull] crystal direction,, The electron affinity estimated from newly observed spectra is smaller than that in a previous measurement without stress and is consistent with the theoretical prediction for the D" state. The larger electron affinity of the D" state without stress is ascribed to a many-valley effect.913

show abstract

Section: Leysupporting

confidence: 81%

“…In the submillimeter photoconductivity measurements on Ge, 6 the experimental electron affinity of the shallow trapping state, which has been supposed to be the D~ state, was about 3 times larger than the theoretical value 7 estimated by a simple analogy to H". 8 Moreover the spectral shape of the photoconductivity does not agree with the theoretical one.…”

mentioning

confidence: 79%

Uniaxial Stress Effect on the Electron Affinity of theD−State in Germanium

Narita

Takeuchi

1976

Phys. Rev. Lett.

Self Cite

View full text Add to dashboard Cite

show abstract

“…The experimental [1][2][3] and theoretical [4] understanding of these "overcharged" donors is excellent. A+ centers have also been experimentally found [1], though the data for A+ are substantially less abundant than for D-.…”

mentioning

confidence: 99%

Positively Charged Acceptors with (ls)3 and (ls)4 Configurations

Häller

McMurrayJr.

Haegel

et al. 1985

Proceedings of the 17th International Conference on the Physics of Semiconductors

View full text Add to dashboard Cite

On the Binding Energies of D⁻ States in Doped Germanium. Effects of Valley‐Orbit Corrections and Compressive Uniaxial Stress

Weber

Oliveira

1989

Physica Status Solidi (b)

View full text Add to dashboard Cite

The effects of compressive uniaxial stress along the [lll] direction and of valley-orbit corrections on the binding energies of D-states in Sb-and P-doped germanium are calculated. A variational procedure is used with a Chandrasekhar-type of variational wave function. The model Hamiltonian takes into account electron-electron interaction, valley-orbit corrections, and stress effects. The results show similar behavior as in previous work on doped silicon and quantitatively agree with available long-wavelength photoconductivity measurements for doped germanium. Der EinfluS einachsigen Drucks in [llll-Richtung und von Tal-Bahn-Korrekturen auf die Bindungsenergien von D--Zustiinden in Sb-und P-dotiertem Germanium wird berechnet. EineVariationsmethode zusammen mit einer Chandrasekhar-artiger Versuchswellenfunktion wird angewandt. Elektron-Elektron-Wechselwirkung, Tal-Bahn-Korrekturen und Druckeffekte werden im Modellhamiltonian mit einbezogen. Die Resultate weisen ein iihnliches Verhalten auf wie vorige Arbeiten an dotiertem Silizium, sie stimmen auch verhaltnismlBig gut mit zur Verfiigung stehenden Photowiderstandsmessungen im Langwellenbereich uberein.

show abstract

Very Shallow Trapping State in Doped Germanium

Cited by 46 publications

References 5 publications

Uniaxial Stress Effect on the Electron Affinity of theD−State in Germanium

Uniaxial Stress Effect on the Electron Affinity of theD−State in Germanium

Positively Charged Acceptors with (ls)3 and (ls)4 Configurations

On the Binding Energies of D⁻ States in Doped Germanium. Effects of Valley‐Orbit Corrections and Compressive Uniaxial Stress

Contact Info

Product

Resources

About

Very Shallow Trapping State in Doped Germanium

Cited by 46 publications

References 5 publications

Uniaxial Stress Effect on the Electron Affinity of theD−State in Germanium

Uniaxial Stress Effect on the Electron Affinity of theD−State in Germanium

Positively Charged Acceptors with (ls)3 and (ls)4 Configurations

On the Binding Energies of D− States in Doped Germanium. Effects of Valley‐Orbit Corrections and Compressive Uniaxial Stress

Contact Info

Product

Resources

About

On the Binding Energies of D⁻ States in Doped Germanium. Effects of Valley‐Orbit Corrections and Compressive Uniaxial Stress