Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002.
DOI: 10.1109/pvsc.2002.1190834
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Very low surface recombination velocities on p- and n-type silicon wafers passivated with hydrogenated amorphous silicon films

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Cited by 72 publications
(51 citation statements)
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“…In order to reduce the influence of surface recombination, the wafer was chemically polished and passivated with a-Si by PECVD according to the process described by Dauwe et al. 19 However, the effective lifetime measured on the passivated wafer is still lower than that measured on the ingot through transient-PCD with the maximum lifetime about 6ms at an excess carrier density of 5×10 14 cm -3 . The higher the bulk lifetime is, the larger the observed difference.…”
Section: Correlation Of Lifetime To Td Concentration In As-grown Smentioning
confidence: 99%
“…In order to reduce the influence of surface recombination, the wafer was chemically polished and passivated with a-Si by PECVD according to the process described by Dauwe et al. 19 However, the effective lifetime measured on the passivated wafer is still lower than that measured on the ingot through transient-PCD with the maximum lifetime about 6ms at an excess carrier density of 5×10 14 cm -3 . The higher the bulk lifetime is, the larger the observed difference.…”
Section: Correlation Of Lifetime To Td Concentration In As-grown Smentioning
confidence: 99%
“…We have also given in Table VII, the values of the corresponding recombination speeds at the a-Si:H /c-Si front and the c-Si/a-Si:H rear HJs, as calculated by ASDMP, under AM1.5 illumination and 0 V. We find that for a well-passivated front interface ͑N ss Յ ϳ 3 ϫ 10 11 cm −2 ͒ the recombination speed at this HJ is less than 10 cm/s ͑Table VII͒, in good agreement with measured interface recombination speeds. 36 In Fig. 7͑a͒, we plot the light J-V characteristics and in Fig.…”
Section: E Sensitivity Of the Solar Cell Output To The Defect Densitmentioning
confidence: 99%
“…10"'L'2~""""'~~"""""~""""""""""''''''''''':':'''""'''''''''''-::-I 10 10'3 10 14 10'5 Injection level LIn (em-3 ) Figure 1: Effective lifetime as a function of the excess carrier density for low resistivity n-type (275 Ilm, <100>, 1_9 n cm) float zone c-Si substrate passivated with a 30, 15 and 7 nm thick AI203 film_ [7] In values for a B-doping concentra Ion > cm were extracted from the measured emitter saturation current density on B-doped p-type emitters as discussed in detail in a separate publication_ [8] The effective surface recombination values for lightly B-doped c-Si were calculated assuming an infinite bulk lifetime and using the best values published in the studies of Kerr et aL [6,9,10] and Dauwe et aL [9] Injection level (em-3 ) The excellent level of surface passivation by AI203 was also confirmed by solar cell device performance. AI203 applied at the rear of p-type c-Si solar cells yielded a maximum efficiency of 20.6 %.…”
Section: Introductionmentioning
confidence: 99%