Very low drift and high sensitivity of nanocrystal-TiO2 sensing membrane on pH-ISFET fabricated by CMOS compatible process

Enhanced thermal stability by introducing TiN diffusion barrier layer between W and SiC

“…In this study, the strain energy became dominant due to the large film thickness and high bombardment energy (2 kW) of the deposited particles, and the (111) preferred orientation was observed according to the energy minimization rule. For the annealed TiN film, the (111) diffraction peaks are shifted from 2θ = 42.5° to 42.9°, which has the same variation trend as that reported by other authors . This implies that postannealing reduces the lattice parameter of the TiN film, which is probably attributed to out‐diffusion of the implanted sputter gases and the decrease in residual strain and other defects.…”

“…For the annealed TiN film, the (111) diffraction peaks are shifted from 2θ = 42.5° to 42.9°, which has the same variation trend as that reported by other authors. 21 This implies that postannealing reduces the lattice parameter of the TiN film, which is probably attributed to out-diffusion of the implanted sputter gases and the decrease in residual strain and other defects. When the annealing temperature is increased from 500 to 1100°C, the preferred orientation does not change but the intensity of the peak and the grain size increases.…”

Nitrogen ratio and RTA optimization on sputtered TiN/SiO2/Si electrolyte-insulator–semiconductor structure for pH sensing characteristics

“…4 which could lead to non-specific degradation of the sensing layer in both in acid and basic solutions. The total hysteresis width of TiN with N 2 ratio of 20% and RTA at 800 C is 2.4 mV, which is comparable to other materials including HfO 2 [10], Ta 2 O 5 [13] and TiO 2 [30].…”

“…Then, another type of conductive material, tin oxide, was proposed as a sensing membrane for extended gate ISFETs (EGFET) [26e28]. Next, in 2012, Chin et al [29] and Bunjongpru et al [30] proposed an ITO layer as a material for an extended-gate field-effect-transistor (EGFET) in which they proposed that the TiO 2 or TiON membranes were prepared by annealing Ti and TiN thin films, respectively, both deposited on SiO 2 /p-Si substrates by a reactive DC magnetron sputtering system to form electrolyte-insulatoresemiconductor (EIS) structures [30]. In all three studies, the obtained pH sensitivity of the developed layers was in the range of 57e59 mV/pH for pH range from 2 to 10.…”

Ultrasensitive Electrical Detection of Hemagglutinin for Point-of-Care Detection of Influenza Virus Based on a CMP-NANA Probe and Top-Down Processed Silicon Nanowire Field-Effect Transistors

“…This detection time is two orders of magnitude smaller than the sensing time of RT-qPCR, the gold standard of biomolecular detection [29]. Moreover, the ion-sensitive FET (ISFET) array has been further industrialized as the extended-gate ISFET (EG-ISFET) [30,31,32].…”