Very low defect remote hydrogen plasma clean of Si (100) for homoepitaxy

Anthony, B.; Hsu, Tsan-sheng; Breaux, L.; Qian, R.; Banerjee, Sanjay K.

doi:10.1007/bf02651977

Cited by 49 publications

(11 citation statements)

References 11 publications

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“…Furthermore, the plasma can be seen as a mixture of argon plasma and diluted hydrogen plasma. As it is well known, during sputtering the substrate is not perfectly isolated from the plasma, so the deposited film is possibly being affected by the plasma region; this consequently leads to a hydrogen plasma treatment 24–26. The hydrogen plasma treatment is found to be beneficial for some PECVD deposited a‐Si:H films 27–29.…”

Section: Discussionmentioning

confidence: 99%

Surface passivation of crystalline silicon by sputter deposited hydrogenated amorphous silicon

Zhang

Hargreaves

Wan

et al. 2013

Physica Rapid Research Ltrs

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This letter shows that intrinsic hydrogenated amorphous silicon (a‐Si:H) films deposited by RF magnetron sputtering can provide outstanding passivation of crystalline silicon surfaces, similar to that achieved by plasma enhanced chemical vapour deposition (PECVD). By using a 2% hydrogen and 98% argon gas mixture as the plasma source, 1.5 Ω cm n‐type FZ silicon wafers coated with sputtered a‐Si:H films achieved an effective lifetime of 3.5 ms, comparable to the 3 ms achieved by PECVD (RF and microwave dual‐mode). This is despite the fact that Fourier transform infrared spectroscopy measurements show that sputtering and PECVD deposited films have very different chemical bonding configurations. We have found that film thickness and deposition temperature have a significant impact on the passivation results. Self‐annealing and hydrogen plasma treatment during deposition are likely driving forces for the observed changes in surface passivation. These experimental results open the way for the application of sputtered a‐Si:H to silicon heterojunction solar cells. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Discussionmentioning

confidence: 99%

Surface passivation of crystalline silicon by sputter deposited hydrogenated amorphous silicon

Zhang

Hargreaves

Wan

et al. 2013

Physica Rapid Research Ltrs

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“…The reference spectrum of the C -H stretching vibration region was recorded after hydrogen plasma treatment. The hydrogen plasma treatment of Si surfaces can considerably reduce the level of contaminant species such as oxygen and hydrocarbons [19,20]. Substrate temperatures were monitored by a chromel -alumel thermocouple that was attached to the Si surface, though the substrate temperature was not controlled.…”

Section: Methodsmentioning

confidence: 99%

Evolution of hydrocarbon species on a silicon surface during methane plasma investigated by in-situ infrared spectroscopy

et al. 2006

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“…These methods have traditionally taken the form of an in situ argon or hydrogen-plasma cleaning technique. 6,8,10 Argon-plasma cleans can remove both carbon and oxygen from the surface via energetic ion bombardment. The level of this bombardment, however, results in lattice damage that must be repaired through a postclean anneal at an elevated temperature of 700°C.…”

Section: Introductionmentioning

confidence: 99%

Comparison of two surface preparations used in the homoepitaxial growth of silicon films by plasma enhanced chemical vapor deposition

Reidy

Varhue

Lavoie³

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inThe use of optical microscopy to examine crystallite nucleation and growth in thermally annealed plasma enhanced chemical vapor deposition and hot wire chemical vapor deposition a-Si:H films Microstructure and initial growth characteristics of nanocrystalline silicon films fabricated by very high frequency plasma enhanced chemical vapor deposition with highly H 2 dilution of SiH 4

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Very low defect remote hydrogen plasma clean of Si (100) for homoepitaxy

Cited by 49 publications

References 11 publications

Surface passivation of crystalline silicon by sputter deposited hydrogenated amorphous silicon

Surface passivation of crystalline silicon by sputter deposited hydrogenated amorphous silicon

Evolution of hydrocarbon species on a silicon surface during methane plasma investigated by in-situ infrared spectroscopy

Comparison of two surface preparations used in the homoepitaxial growth of silicon films by plasma enhanced chemical vapor deposition

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