Very long carbon nanotubes

Pan, Z. W.; Xie, Songhai; Chang, B. H.; Wang, Chunyang; Lü, Li; Liu, W.; Zhou, Wei; Li, W. Z.; Li, Qian

doi:10.1038/29206

Cited by 353 publications

(120 citation statements)

References 7 publications

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“…CVD is ideally suited to growing aligned CNTs on desired substrates for specific applications, which is not feasible by arc or laser methods. Li et al 86 have grown dense MWNT arrays on Feimpregnated mesoporous silica prepared by a sol-gel process, terrones et al 87 have produced CNTs on co-coated quartz substrates via CVD of a triazene compound with nearly no byproducts, while Pan et al 88 have reported the growth of aligned CNTs of more than 2 mm in length over mesoporous substrates from acetylene. Highly aligned nanotubes for electronics have been grown from acetylene 89 using a Co catalyst impregnated in alumina nanochannels at 650°C, while pillars of parallel CNTs have been grown from ethylene on Fe-patterned Si plates at 700°C for field emission applications.…”

Section: Chemical Vapor Depositionmentioning

confidence: 99%

Large Scale Synthesis of Carbon Nanotubes

Karthikeyan¹,

Mahalingam²,

Karthik

2009

E-Journal of Chemistry

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Abstract:Since the discovery of carbon nanotubes in 1991 by Iijima, they have been of great interest both from the fundamental point of view and for future applications. The most eye catching features of this structure are their electronic, mechanical, optical and chemical characteristics, which opens a way to future applications. These properties can even be measured on single nanotubes. For commercial applications, large quantities of purified nanotubes are needed. In this paper, recent research on preparation of carbon nanotubes with special reference to low temperature synthesis of high purity is reviewed. The reported achievements in this area will open up more knowledge on carbon nanostructured materials in many areas of emerging nanoscale science and nanotechnology.

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Section: Chemical Vapor Depositionmentioning

confidence: 99%

Large Scale Synthesis of Carbon Nanotubes

Karthikeyan¹,

Mahalingam²,

Karthik

2009

E-Journal of Chemistry

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“…In order to obtain good performance, such as device effects and electrical conductivity, direct growth on metal substrates had also been reported [10][11][12], in which the highly oriented CNTs array was grown by microwave plasma chemical vapor deposition (MPCVD) or plasma enhanced chemical vapor deposition (PECVD) [13]; the directional growth of CNTs was guided by the electric field bias of the plasma [14], but the growth effect was inferior to that of silicon substrate. In addition, in the area of growth of long CNTs on silicon substrate, many research teams had done a lot of work to continuously improve the height and quality of CNTs array [11][12][13][14][15][16][17]. In this paper, first, CNTs array with higher quality are synthesized directly on the silicon substrate by using the chemical vapor deposition (CVD) tube furnace.…”

Section: Introductionmentioning

confidence: 99%

Effects of the Growth Time and the Thickness of the Buffer Layer on the Quality of the Carbon Nanotubes

Chuen

2017

Journal of Nanomaterials

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Direct growth of carbon nanotubes (CNTs) array onto silicon substrate by the chemical vapor deposition (CVD) is reported. Experimental results show that the thickness of the buffer layer has a significant effect on the morphology and defects of the array, and when the buffer layer is about 15 nm, the best array on the silicon substrate can be obtained. Moreover, when the growth time is less than the threshold time (70 minutes), the array height will increase with the increase of the time. Importantly, when the growth time is higher than this threshold time, the growth of array will stop, but when the growth is continuing, the amorphous carbon and carbon can cluster, which will affect the structure of the array. These results provide a good material basis for the device, thermal, and conductivity technology.

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“…For their synthesis, arc discharge (Iijima, 1991), laser ablation (Thess et al, 1996), and chemical vapor deposition (CVD) (Pan et al, 1998;Ren et al, 1998;Tanemura et al, 2001) have conventionally been employed. In those methods, however, growth temperatures higher than 500 o C are generally required.…”

Section: Introductionmentioning

confidence: 99%