Very high (&amp;gt;1019 cm−3) <i>in situ</i> n-type doping of silicon during molecular beam epitaxy using supersonic jets of phosphine

Malik, R.; Gülari, Erdogan; Bhattacharya, P.; Linder, K. K.; Rieh, Jae-Sung

doi:10.1063/1.119074

Cited by 4 publications

(7 citation statements)

References 14 publications

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“…These are the first experimental data that directly demonstrate the ability of supersonic jets to reduce the substrate temperature in thin film growth. Under similar conditions, growth on Si (111) substrates occurred at higher substrate temperatures and resulted in poorer crystalline quality than on Si(100). Energy enhancement was not investigated on Si (111).…”

Section: Silicon Carbidementioning

confidence: 87%

“…Under similar conditions, growth on Si (111) substrates occurred at higher substrate temperatures and resulted in poorer crystalline quality than on Si(100). Energy enhancement was not investigated on Si (111).…”

Section: Silicon Carbidementioning

confidence: 87%

“…111 A depression of the silicon growth rate was observed at 620˚C with increasing pulse widths. Interestingly, the SIMS doping profiles showed no change in the doping level as a function of the PH 3 pulse duration.…”

Section: Device Fabrication Using Supersonic Molecular Jet Epitaxymentioning

confidence: 96%

“…This nonnormal energy scaling is interpreted in terms of local energy scaling to mean that because of a strong corrugation in the surface potential typical for covalent surfaces, chemisorption is governed by the kinetic energy applied along the local surface normal. 46 The dependence of the reaction probability on the surface structure is best illustrated by the reaction of Si 2 H 6 on reconstructed Si (111). 47 In contrast to a monotonic increase of reaction probability with substrate temperature on a Si(100) surface, a dramatic jump is observed above the temperature corresponding to the transition from the Si(7 × 7) reconstruction to the unreconstructed Si(1 × 1) surface.…”

Section: Silicon and Germaniummentioning

confidence: 97%

“…A study of energy-enhanced growth of β-SiC on Si(100) and Si (111) substrates in a temperature range from 600 to 900˚C using CH 3 SiH 3 found the growth rates and crystalline quality to be extremely sensitive to both the incident kinetic energy and the substrate temperature. 101 The translational energy of CH 3 SiH 3 seeded in N 2 and H 2 was estimated to be between 0.7 and 1.4 eV.…”

Section: Silicon Carbidementioning

confidence: 99%

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Application of Supersonic Molecular Jets in Semiconductor Thin Film Growth

Eres

1998

Critical Reviews in Solid State and Materials Sciences

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Section: Silicon Carbidementioning

confidence: 87%

Section: Silicon Carbidementioning

confidence: 87%

Section: Device Fabrication Using Supersonic Molecular Jet Epitaxymentioning

confidence: 96%

Section: Silicon and Germaniummentioning

confidence: 97%

Section: Silicon Carbidementioning

confidence: 99%

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Application of Supersonic Molecular Jets in Semiconductor Thin Film Growth

Eres

1998

Critical Reviews in Solid State and Materials Sciences

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Study of thin film deposition processes employing variable kinetic energy, highly collimated neutral molecular beams

Roadman¹,

Maity²,

Carter³

et al. 1998

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Supersonic molecular beams have been investigated as alternative sources for thin film deposition employing a custom designed ultrahigh vacuum reactor. Molecular beam flux produced in this reactor has been measured as a function of gas flow rate, gas composition, and nozzle temperature. An efficient method to measure kinetics of thin film deposition has been developed that allows a large amount of kinetic data (i.e., deposition rate and incubation time) to be gathered per deposition experiment on a single substrate. Film thickness uniformity has been measured under two limiting conditions, which permitted the estimation of both flux and temperature spatial variations across the substrate. The kinetics of epitaxial silicon thin film deposition using Si2H6 has been examined as a function of incident beam kinetic energy (0.5–2.2 eV) and substrate temperature (550–750 °C). Calculated Si incorporation probabilities agree favorably with reaction probabilities previously measured in our laboratory employing a different apparatus and an alternative technique. The kinetics of Si1−xGex thin film growth using mixtures of Si2H6 and GeH4 were also investigated as a function of substrate temperature. In this case the Ge thin film composition was measured as a function of Ge composition of the beam. The incubation period associated with polycrystalline Si deposition on SiO2 has been investigated as a function of substrate temperature and incident beam kinetic energy. The incubation period decreases with both increasing substrate temperature and incident beam kinetic energy. SiC thin film deposition on Si(100) using SiH3CH3 (Ei=2.0 eV) has been investigated and the growth rate depends rather weakly on substrate temperature. Thin film morphology has been characterized using atomic force microscopy, while film crystallinity for polycrystalline and epitaxial films has been examined using x-ray diffraction and low energy electron diffraction, respectively. Epitaxial Si films exhibit a strong (2×1)+(1×2) pattern and a root-mean-square (rms) roughness of <1 nm, while polycrystalline films show 〈111〉, 〈220〉, and 〈311〉 reflections and a rms roughness of 8–25 nm, which increases with film thickness and deposition temperature.

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Phosphorus Doping and Sharp Profiles in Silicon and Silicon-Germanium Epitaxy by Rapid Thermal Chemical Vapor Deposition

Yang

Carroll

Sturm

et al. 2000

J. Electrochem. Soc.

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Background-We conducted a prospective, multicenter, randomized comparison of implantable cardioverter-defibrillator (ICD) versus antiarrhythmic drug therapy in survivors of cardiac arrest secondary to documented ventricular arrhythmias. Methods and Results-From 1987, eligible patients were randomized to an ICD, amiodarone, propafenone, or metoprolol (ICD versus antiarrhythmic agents randomization ratio 1:3). Assignment to propafenone was discontinued in March 1992, after an interim analysis conducted in 58 patients showed a 61% higher all-cause mortality rate than in 61 ICD patients during a follow-up of 11.3 months. The study continued to recruit 288 patients in the remaining 3 study groups; of these, 99 were assigned to ICDs, 92 to amiodarone, and 97 to metoprolol. The primary end point was all-cause mortality. The study was terminated in March 1998, when all patients had concluded a minimum 2-year follow-up. Over a mean follow-up of 57Ϯ34 months, the crude death rates were 36.4% (95% CI 26.9% to 46.6%) in the ICD and 44.4% (95% CI 37.2% to 51.8%) in the amiodarone/metoprolol arm. Overall survival was higher, though not significantly, in patients assigned to ICD than in those assigned to drug therapy (1-sided Pϭ0.081, hazard ratio 0.766, [97.5% CI upper bound 1.112]). In ICD patients, the percent reductions in all-cause mortality were 41.9%, 39.3%, 28.4%, 27.7%, 22.8%, 11.4%, 9.1%, 10.6%, and 24.7% at years 1 to 9 of follow-up. Conclusions-During long-term follow-up of cardiac arrest survivors, therapy with an ICD is associated with a 23%(nonsignificant) reduction of all-cause mortality rates when compared with treatment with amiodarone/metoprolol. The benefit of ICD therapy is more evident during the first 5 years after the index event. (Circulation. 2000;102:748-754.)

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Very high (>1019 cm−3) in situ n-type doping of silicon during molecular beam epitaxy using supersonic jets of phosphine

Cited by 4 publications

References 14 publications

Application of Supersonic Molecular Jets in Semiconductor Thin Film Growth

Application of Supersonic Molecular Jets in Semiconductor Thin Film Growth

Study of thin film deposition processes employing variable kinetic energy, highly collimated neutral molecular beams

Phosphorus Doping and Sharp Profiles in Silicon and Silicon-Germanium Epitaxy by Rapid Thermal Chemical Vapor Deposition

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Very high (&gt;1019 cm−3) in situ n-type doping of silicon during molecular beam epitaxy using supersonic jets of phosphine

Cited by 4 publications

References 14 publications

Application of Supersonic Molecular Jets in Semiconductor Thin Film Growth

Application of Supersonic Molecular Jets in Semiconductor Thin Film Growth

Study of thin film deposition processes employing variable kinetic energy, highly collimated neutral molecular beams

Phosphorus Doping and Sharp Profiles in Silicon and Silicon-Germanium Epitaxy by Rapid Thermal Chemical Vapor Deposition

Contact Info

Product

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Very high (>1019 cm−3) in situ n-type doping of silicon during molecular beam epitaxy using supersonic jets of phosphine