Very efficient void formation in ion implanted InSb

Abstract

Galvanomagnetic luminescence and the quantum efficiency of radiative recombination of InSb

Ion-beam-induced porosity of GaN

“…Similar effects have been observed in some other semiconductors, such as Ge, 6,7 InSb, 8 and GaSb. 9 In general, amorphousness is not necessarily the final state of a semiconductor exposed to ion bombardment.…”

Etch-free formation of porous silicon by high-energy ion irradiation

“…While BF TEM imaging was able to reveal distinct void clusters (Fig. 1, Insert), the material as a whole does not contain the same level of porosity as that seen in ion irradiated Ge, GaSb, or InSb [7][8][9][10][11][12][13][14][15].…”

“…The fundamental mechanism for fabrication of porous Si centers around chemical etching [3,4], and while some studies have shown that ion irradiation prior to chemical etching can be used to control certain properties of porous Si [5,6], all porous Si fabrication processes use some combination of anodization or stain etching to produce the porosity in Si. In contrast, dense porous networks have been fabricated in many semiconductor materials, including Ge [7][8][9], GaSb [10][11][12], and InSb [13][14][15], purely by high-energy ion irradiation of the target material. These porous structures consist of interconnected networks of voids ranging in size from tens to hundreds of nanometers in diameter, and void growth and coalescence results in confinement of the matrix material into fibers or cell walls tens of nanometers in thickness.…”

Ion Irradiation-Induced Changes in Surface Morphology of InSb

“…Ion irradiation of InSb is known to create extended void networks that result in the formation of highly porous, fiber-like InSb nanostructures [1]. Similar structures have been observed in other antimonides, such as GaSb [2], as well as other semiconductors, including germanium [3].…”