Very Compact High-gain Broadband Low-noise Amplifier in InP HEMT Technology

Masuda,; Ohki,; Hirose,

doi:10.1109/mwsym.2006.249932

2006 IEEE MTT-S International Microwave Symposium Digest 2006

DOI: 10.1109/mwsym.2006.249932

|View full text |Cite

Very Compact High-gain Broadband Low-noise Amplifier in InP HEMT Technology

Masuda Masuda

Ohki Ohki

Hirose Hirose

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2006

2018

Publication Types

Select...

Article3

Relationship

Self Cite0

Independent3

Authors

Journals

Cited by 3 publications

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review

Ajayan¹,

Nirmal

Ravichandran³

et al. 2018

AEU - International Journal of Electronics and Communications

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Very Compact High-gain Broadband Low-noise Amplifier in InP HEMT Technology

Cited by 3 publications

References 9 publications

InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review

InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review

Very Compact High-Gain Broadband Low-Noise Amplifier in InP HEMT Technology

RF Chipset for Impulse UWB Radar Using 0.13-$\mu{\hbox {m}}$ InP-HEMT Technology

Contact Info

Product

Resources

About