Vertically Integrated Optical Sensor With Photoconductive Gain &gt; 10 and Fill Factor &gt; 70%

Zhou, Xianda; Zhang, Meng; Xu, Yitong; Zhou, Wei; Wang, Kai; Nathan, Arokia; Wong, Man; Kwok, Hoi Sing; Ou, Hai; Chen, Jun; Deng, Shaozhi; Xu, Ning

doi:10.1109/led.2018.2792003

Cited by 13 publications

(3 citation statements)

References 16 publications

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“…[16]. In our previous work, we experimentally proved these concepts in single-pixel optical sensors based on PD-gated a-Si:H and LTPS TFTs, respectively [4,5]. To implement it in image sensors, we further designed and fabricated an a-Si:H TFT-based 256×256 image sensor array with 45μm×55μm pixel size and 505-ppi spatial resolution.…”

Section: Photodiode-body-biased Mosfetmentioning

confidence: 97%

Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications

Wang

et al. 2020

IEEE J. Electron Devices Soc.

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In optical sensors and imagers, high gain that leads to high sensitivity and high signal to noise ratio (SNR) is often desirable. One popular approach is avalanche photomultiplication initiated by impact ionization in an avalanche photodiode or similar devices and the other approach is active pixel sensor (APS) with in-pixel amplifier. However, the former requires high electric field which induces high shot noise and the latter needs a multiple-transistor pixel circuit which compromises the fill factor and consequently, reduces the SNR. This work proposes and summarizes our recent efforts taken to achieve high gain optical sensors through subthreshold operation of photodiode-gated transistors.

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Section: Photodiode-body-biased Mosfetmentioning

confidence: 97%

Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications

Wang

et al. 2020

IEEE J. Electron Devices Soc.

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“…4 photomasks are used for the fabrication of IGZO TFT and 2 fine-metal masks are for the perovskite photodiode fabrication. For comparison, 12 masks are required for typical conventional optical sensor fabrication [5,6].…”

Section: Introductionmentioning

confidence: 99%

Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection

Zou

Ben

et al. 2021

IEEE J. Electron Devices Soc.

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The integration of perovskite photodetectors with thin-film transistor (TFT) backplane or complementary metaloxide-semiconductor CMOS circuit is a key step towards prototyping perovskite-based image sensors. Here, we demonstrate a pixel configuration for indirect X-ray detection comprising of IGZO TFTs and perovskite photodiodes (PDs). The perovskite photodiode is patterned by a two-step deposition method. Our integrated TFT/PD pixel shows a weak light detection capability down to 4 nW cm-2 , and a fast-transient response to the pulse light and gate switching. Combining with a CsI scintillator, the integrated pixel achieves a specific X-ray sensitivity of 8.2  10 2 μC mGyair-1 cm-3. Theoretically, with a stateof-the-art scintillator, the new pixel can provide a detectable signal for X-ray imaging at a dose rate as low as 10 μGyair s-1. This work provides an advanced pixel design for high resolution, high sensitivity, and high frame-rate flat-panel imager.

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“…TFTs fabricated with IGZO:F have been shown to exhibit significantly improved reliability against electrical, thermal and illumination stress [9]. In this work, a silanebased process for the plasma-enhanced chemical vapor deposition (PECVD) of a silicon oxide layer and a thick a-Si:H layer have been employed to simulate the H-rich environment to which a TFT would be exposed during the fabrication of photo-diodes based on a-Si:H [10].…”

Section: Introductionmentioning

confidence: 99%

24‐2: Distinguished Student Paper: Fluorination for Enhancing the Resistance of Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor against Hydrogen‐Induced Degradation

Wang

Shi

et al. 2020

Symp Digest of Tech Papers

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Amorphous indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) with or without fluorinated channels were fabricated. The sensitivity of their electrical characteristics to hydrogen exposure was compared. It is shown that those built with fluorinated IGZO exhibit improved intrinsic resistance against hydrogen-induced degradation. Such improvement correlates well with the reduced incorporation of hydrogen in the fluorinated channels, as revealed by secondary ion-mass spectrometry. Fluorinated IGZO TFTs are better suited for integration with hydrogen-containing devices, such as photo-diodes based on amorphous hydrogenated silicon and TFTs based on low-temperature polycrystalline silicon.

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Vertically Integrated Optical Sensor With Photoconductive Gain > 10 and Fill Factor > 70%

Cited by 13 publications

References 16 publications

Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications

Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications

Pixellated Perovskite Photodiode on IGZO Thin Film Transistor Backplane for Low Dose Indirect X-Ray Detection

24‐2: Distinguished Student Paper: Fluorination for Enhancing the Resistance of Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor against Hydrogen‐Induced Degradation

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