2007
DOI: 10.1088/0957-4484/18/27/275301
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Vertically aligned wurtzite CdTe nanowires derived from a catalytically driven growth mode

Abstract: Substrate-based catalytic growth modes have been widely used to fabricate vertically aligned nanowires for most technologically relevant semiconducting systems, with CdTe being a notable exception. The catalysts that promote a one-dimensional nanoscale growth mode in other systems seem to fail, creating the need for an alternative approach. Here, we demonstrate how nanowire structures can be derived from a newly developed catalytically driven process. The vertically aligned nanowires produced are highly facete… Show more

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Cited by 68 publications
(58 citation statements)
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“…The length of the rods is controlled by varying the amount of the gold deposited and thus the aspect ratio of the nanorods can be tuned accordingly. In a similar vein, CdTe nanorods [8,221,222] were used as a template upon which a thin gold nanoshell layer was deposited (Fig. 13).…”
Section: Template Methodsmentioning
confidence: 99%
“…The length of the rods is controlled by varying the amount of the gold deposited and thus the aspect ratio of the nanorods can be tuned accordingly. In a similar vein, CdTe nanorods [8,221,222] were used as a template upon which a thin gold nanoshell layer was deposited (Fig. 13).…”
Section: Template Methodsmentioning
confidence: 99%
“…This is a clear manifestation of HH-LH mixing, which enters through the squared amplitudes of the HH and LH components in Eq. (25). Thus, even though the Hamiltonian giving rise to the splitting characterized by g α orb,diag is diagonal in spin-space, its contribution to the spin splitting is affected by the quantum-confinement-induced HH-LH mixing in the unperturbed states.…”
Section: Orbital Effectsmentioning
confidence: 99%
“…Rapid developments in material science and technology have enabled the realization of nanowires from many materials and materials combinations, such as III-V semiconductors (e.g., GaAs, 1,22,27 InP, 2,3,10,12 InAs 1,7,8,29 ), II-VI semiconductors (e.g., CdSe, 5,12 CdS, 12 CdTe, 4,25 ZnTe 20,32 ), as well as Si 14,24,28 and Ge. 23,30,31 By now it is possible to dope nanowires 22,26,29 and perform heterostructure engineering with atomic precision.…”
Section: Introductionmentioning
confidence: 99%
“…It is known that PLD method is one of the best methods to grow 1D nanostructures with high quality. Neretina et al used the PLD method to grow CdTe nanowires [48]. They used Bi as metal catalyst and sapphire as substrate for growth of the CdTe nanowires.…”
Section: Pulsed Laser Deposition (Pld) Methods To Grow Cd-chalcogenidementioning
confidence: 99%