“…Rapid developments in material science and technology have enabled the realization of nanowires from many materials and materials combinations, such as III-V semiconductors (e.g., GaAs, 1,22,27 InP, 2,3,10,12 InAs 1,7,8,29 ), II-VI semiconductors (e.g., CdSe, 5,12 CdS, 12 CdTe, 4,25 ZnTe 20,32 ), as well as Si 14,24,28 and Ge. 23,30,31 By now it is possible to dope nanowires 22,26,29 and perform heterostructure engineering with atomic precision.…”