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2012
DOI: 10.1088/0957-4484/24/2/025301
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Vertically aligned carbon nanopillars with size and spacing control for a transparent field emission display

Abstract: A top-down fabrication method is presented for vertically aligned carbon nanopillars (CNPs) using photolithography and pyrolysis. The modified backside exposure method of photolithography fabricates vertically aligned polymer (SU-8) nanopillars. The pyrolysis process, which transforms the polymer to amorphous carbon, reliably produces vertically aligned CNPs with widths ranging from 100 to 400 nm. The CNPs can be used as a transparent field emission cathode for a transparent display and light emission is obser… Show more

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Cited by 8 publications
(2 citation statements)
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“…Substrates, transparent to lithography lights, such as the g-, h-, and i-lines (436, 405, and 365 nm, respectively), are the key requirements in BEL as the photo-illumination is applied from the reverse side of the substrate to enable accurate lithographic alignment of the metal pattern. Ultraviolet-transparent glass and plastic substrates with optically flat front and back surfaces have been used in BEL [1][2][3][4][5][6][7][8][9][10] to fabricate various nanostructures, including self-aligned bottom-gates for thin film transistors, [1][2][3][4] nanoscale beam resonators, 5) metal wires 6) and rings, 6,7) and polymer-based nanopillars 8) and complex three-dimensional structures. 9,10) Although monocrystalline wide-bandgap semiconductor substrates are transparent to conventional lithography lights, there have been few attempts to use backside-exposure lithography in the literature.…”
mentioning
confidence: 99%
“…Substrates, transparent to lithography lights, such as the g-, h-, and i-lines (436, 405, and 365 nm, respectively), are the key requirements in BEL as the photo-illumination is applied from the reverse side of the substrate to enable accurate lithographic alignment of the metal pattern. Ultraviolet-transparent glass and plastic substrates with optically flat front and back surfaces have been used in BEL [1][2][3][4][5][6][7][8][9][10] to fabricate various nanostructures, including self-aligned bottom-gates for thin film transistors, [1][2][3][4] nanoscale beam resonators, 5) metal wires 6) and rings, 6,7) and polymer-based nanopillars 8) and complex three-dimensional structures. 9,10) Although monocrystalline wide-bandgap semiconductor substrates are transparent to conventional lithography lights, there have been few attempts to use backside-exposure lithography in the literature.…”
mentioning
confidence: 99%
“…Figura 2.12 -Fotografia da emissão de luz do filme de pó de fósforo excitado pela emissão de elétrons por campo elétrico originado no catodo. A tensão aplicada é de 2 kV e a distância entre anodo e catodo é de 300 µm.Fonte:(LEE et. al., 2013).Pode-se observar, através dos exemplos citados, que a imagem de emissão não associa valores quantitativos da corrente elétrica de emissão em cada ponto da área ativa do dispositivo.…”
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