Vertical versus lateral tunneling FET non-volatile memory cell

Biswas, Arnab; Tomar, Saurabh; Ionescu, Adrian M.

doi:10.1109/snw.2016.7577976

2016 IEEE Silicon Nanoelectronics Workshop (SNW) 2016

DOI: 10.1109/snw.2016.7577976

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Vertical versus lateral tunneling FET non-volatile memory cell

Arnab Biswas

Saurabh Tomar

Adrian M. Ionescu

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Vertical versus lateral tunneling FET non-volatile memory cell

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