Vertical silicon waveguide coupler bent by ion implantation

Yoshida, Tomoya; Tajima, Syougo; Takei, Ryohei; Mori, Masahiko; Miura, N.; Sakakibara, Youichi

doi:10.1364/oe.23.029449

Cited by 35 publications

(15 citation statements)

References 28 publications

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“…In addition, the sputtering effect will be enhanced in low‐lying areas, and then, the surface of materials will become rougher . Some researchers have reported that ion irradiation can modulate the surface roughness and bending direction of nanowires (NWs) . For example, Yoshida et al reported that silicon wire cantilevers can be bent by Si ion irradiation .…”

Section: Ion Beam Techniques For Materials Synthesis and Morphology Cmentioning

confidence: 99%

“…Some researchers have reported that ion irradiation can modulate the surface roughness and bending direction of nanowires (NWs) . For example, Yoshida et al reported that silicon wire cantilevers can be bent by Si ion irradiation . Figure shows the scanning electron microscopy (SEM) images of the vertical curved waveguide.…”

Section: Ion Beam Techniques For Materials Synthesis and Morphology Cmentioning

confidence: 99%

Section: Ion Beam Techniques For Materials Synthesis and Morphology Cmentioning

confidence: 99%

See 2 more Smart Citations

A Review of Recent Applications of Ion Beam Techniques on Nanomaterial Surface Modification: Design of Nanostructures and Energy Harvesting

Zhan

Song

et al. 2019

Small

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properties because of their special struc ture. When the materials reach a nano meter size, the electrical, optical, magnetic, and other properties of the materials will be altered greatly because of the small size effect, quantum size effect, sur face and boundary effects, and Coulomb blockade effect. [1] Currently, nanomaterials have been widely applied in many fields, including computers, catalysis, sensors, energy, and environmental protection. [2][3][4][5][6][7][8][9][10][11] As the demand increases, people aspire to fabricate nanomaterials with greater prop erties. Many methods have been used to improve the properties of nanomaterials, including doping, surface reconstruc tion, semiconductor composite, and metal nanoparticle embedding. [12][13][14][15][16][17][18][19][20] These days, ion beam techniques, including ion implantation, irradiation, and focused ion beam (FIB), have been extensively used to modulate the properties of nanomaterials. Moreover, ion beam techniques are regarded as a promising technique for doping and surface modification. Compared with doping during growth and diffusion, ion implantation is more controllable and reproducible. In addition, ion implantation is also an effective method for embedding nanoclusters in body materials. Moreover, ion irradiation is an effective method to modulate the morphology and surface structure of the mate rials. Therefore, via using this technique, various properties of nanomaterials can be tailored. FIB is typically used for the in situ study of ionirradiated materials. Figure 1 shows the applications of ion beam techniques for nanomaterial surface modification.Ion implantation, as an ion beam technique, has been extensively applied to the modulation of nanomaterial sur faces. Moreover, the technique has also been extensively used in the field of microelectronics. Ion implantation has replaced diffusion as a doping method to introduce dopants into the semiconductors. As an industrial technique, it exhibits high controllability and accuracy. In contrast to other doping strat egies, almost all elements can be introduced into the target materials by ion implantation and it does not introduce other impurity elements. In addition, ion implantation is not restricted by the solid solubility of elements in the mate rials. Ion implantation can be described as a collision process Nanomaterials have gained plenty of research interest because of their excellent performance, which is derived from their small size and special structure. In practical applications, to acquire nanomaterials with high performance, many methods have been used to modulate the structure and components of materials. To date, ion beam techniques have extensively been applied for modulating the performance of various nanomaterials. Energetic ion beams can modulate the surface morphology and chemical components of nanomaterials. In addition, ion beam techniques have also been used to fabricate nanomaterials, including 2D materials, nanoparticles, and nanowires. Compared with conventional metho...

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Section: Ion Beam Techniques For Materials Synthesis and Morphology Cmentioning

confidence: 99%

Section: Ion Beam Techniques For Materials Synthesis and Morphology Cmentioning

confidence: 99%

See 1 more Smart Citation

A Review of Recent Applications of Ion Beam Techniques on Nanomaterial Surface Modification: Design of Nanostructures and Energy Harvesting

Zhan

Song

et al. 2019

Small

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show abstract

“…This case is referred to as surface coupling. Surface-coupled PIC may, e.g., rely on grating couplers, SiP waveguides that are bent upwards by ion implantation [31], or on 3D-printed lensed couplers [32]. We only give a summary of the results here; mathematical details can be found in Appendix B.…”

Section: Theoretical Analysis Of Non-planar Switch-and-select (Sas) Cmentioning

confidence: 99%

Photonic-integrated circuits with non-planar topologies realized by 3D-printed waveguide overpasses

Nešić¹,

Blaicher²,

Hoose³

et al. 2019

Opt. Express

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Complex photonic-integrated circuits (PIC) may have strongly non-planar topologies that require waveguide crossings (WGX) when realized in single-layer integration platforms. The number of WGX increases rapidly with the complexity of the circuit, in particular when it comes to highly interconnected optical switch topologies. Here, we present a concept for WGX-free PIC that relies on 3D-printed freeform waveguide overpasses (WOP). We experimentally demonstrate the viability of our approach using the example of a 4 × 4 switch-and-select (SAS) circuit realized on the silicon photonic platform. We further present a comprehensive graph-theoretical analysis of different n × n SAS circuit topologies. We find that for increasing port counts n of the SAS circuit, the number of WGX increases with n 4 , whereas the number of WOP increases only in proportion to n 2 .

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“…[27]- [29] As IIB can be induced using either dopant or inert-gas ion beams, the bending can therefore occur in the processing of nanostructured semiconductors during both the pre-amorphisation step and the subsequent doping . [20], [25] As well as showing potential for future transistor technologies, IIB has also been used by Yoshida et al [30] to create waveguides by bending silicon wires using self-ion irradiation. [30] Furthermore, as straining of germanium nanowires is being investigated as a way of optically activating germanium, IIB might modify the optoelectronics properties of germanium as residual strain is expected to be present in bent nanowires .…”

Section: Introductionmentioning

confidence: 99%

Shape Modification of Germanium Nanowires during Ion Irradiation and Subsequent Solid‐Phase Epitaxial Growth

Camara

Hanif

Tunes

et al. 2018

Adv Materials Inter

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During ion irradiation which is often used for the purposes of band gap engineering, nanostructures can experience a phenomenon known as ion-induced bending (IIB). The mechanisms behind this permanent deformation are the subject of debate. In this work, germanium nanowires are irradiated with 30 or 70 keV xenon ions to induce bending either away from or towards the ion beam. By comparing experimental results with Monte-Carlo calculations, the direction of the bending is found to depend on the damage profile over the cross-section of the nanowire. After irradiation, the nanowires are annealed at temperatures up to 440°C triggering solid-phase epitaxial growth (SPEG) causing further modification to the deformed nanowires. After IIB, it is observed that nanowires which had bent away from the ion beam then straighten during SPEG whilst those which had bent towards the ion beam bend even more. This is attributed to differences in the mechanisms responsible for the ion-beam-induced bending in opposite directions. Thus, the results reported here give insights into the mechanisms causing the IIB of nanowires and demonstrate how to predict the evolution of nanowires under irradiation and annealing. Finally, they show that, under certain conditions, the bending can even be removed via SPEG.

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Vertical silicon waveguide coupler bent by ion implantation

Cited by 35 publications

References 28 publications

A Review of Recent Applications of Ion Beam Techniques on Nanomaterial Surface Modification: Design of Nanostructures and Energy Harvesting

A Review of Recent Applications of Ion Beam Techniques on Nanomaterial Surface Modification: Design of Nanostructures and Energy Harvesting

Photonic-integrated circuits with non-planar topologies realized by 3D-printed waveguide overpasses

Shape Modification of Germanium Nanowires during Ion Irradiation and Subsequent Solid‐Phase Epitaxial Growth

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