Vertical sidewall of silicon nitride mask and smooth surface of etched-silicon simultaneously obtained using CHF3/O2 inductively coupled plasma

Sun, Jiabao; Chen, Zhengyang; Zhou, Shiqi; Sun, Yijun; Li, Zhi; Chen, Changhong; Liu, Yanhua; Sun, Ying; Wang, Meifang; Shi-jian, Xie; Liu, Wucan; Zeng, Qun; Wu, Haifeng; Bai, Zhanqi

doi:10.1016/j.vacuum.2022.111650

Cited by 6 publications

(1 citation statement)

References 52 publications

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“…At certain recipe parameters (e.g., gas flow, RF power, supplementary gases content, etc. ), this layer efficiently passivates the walls of the etching pits but still allows vertical etching of the materials. , CHF 3 -based etching used here produces arbitrary patterns in MoS 2 flakes (including circular holes) with a minimal undercut. Hence it is more versatile compared to SF 6 -based plasma, which inevitably combines vertical and anisotropic in-plane etching of TMDs .…”

Section: Resultsmentioning

confidence: 99%

Enhanced Second-Order Nonlinearities at Strained Ultrasharp Zigzag Edges in Multilayer MoS₂

Dewambrechies,

Polyakov,

Küçüköz

et al. 2023

J. Phys. Chem. C

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Transition metal dichalcogenide (TMD) materials attract significant research attention thanks to their exceptional excitonic and optical properties. In this work, we analyze the formation of strained ultrasharp zigzag edges in MoS2 multilayers produced by anisotropic wet etching. The topography of the edges is determined by the relative stability of the different crystallographic directions of the multilayer as well as the interlayer interactions. Furthermore, we study the linear (Raman) and nonlinear (second-harmonic generation) spectroscopic characteristics of such edges and observe enhanced second-order nonlinearity originating from the strained zigzag edges. We also confirm that ultrasharp hexagonal nanoholes in MoS2 grow along the most stable crystallographic directions despite potential stacking faults or instabilities in the crystal quality. Our results open the way to exploit a broad range of phenomena occurring at the edges of MoS2 material, including the unique determination of crystal orientation for moiré engineering and strongly correlated phenomena in 2D material-based systems, as well as potential applications in TMD-based electrocatalysis and gas sensing.

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Section: Resultsmentioning

confidence: 99%

Enhanced Second-Order Nonlinearities at Strained Ultrasharp Zigzag Edges in Multilayer MoS₂

Dewambrechies,

Polyakov,

Küçüköz

et al. 2023

J. Phys. Chem. C

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Investigation of silicon nitride for spacer via plasma-enhanced atomic layer deposition using a (tert-butylamino)dimethylsilane precursor

Park,

Lin Yang,

Kim

et al. 2024

Applied Surface Science

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Annealing-induced defects and optical degradation in sputter-deposited silicon nitride: Implications for photonic applications

You,

Jiang,

et al. 2024

Ceramics International

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Vertical sidewall of silicon nitride mask and smooth surface of etched-silicon simultaneously obtained using CHF3/O2 inductively coupled plasma

Cited by 6 publications

References 52 publications

Enhanced Second-Order Nonlinearities at Strained Ultrasharp Zigzag Edges in Multilayer MoS₂

Enhanced Second-Order Nonlinearities at Strained Ultrasharp Zigzag Edges in Multilayer MoS₂

Investigation of silicon nitride for spacer via plasma-enhanced atomic layer deposition using a (tert-butylamino)dimethylsilane precursor

Annealing-induced defects and optical degradation in sputter-deposited silicon nitride: Implications for photonic applications

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Vertical sidewall of silicon nitride mask and smooth surface of etched-silicon simultaneously obtained using CHF3/O2 inductively coupled plasma

Cited by 6 publications

References 52 publications

Enhanced Second-Order Nonlinearities at Strained Ultrasharp Zigzag Edges in Multilayer MoS2

Enhanced Second-Order Nonlinearities at Strained Ultrasharp Zigzag Edges in Multilayer MoS2

Investigation of silicon nitride for spacer via plasma-enhanced atomic layer deposition using a (tert-butylamino)dimethylsilane precursor

Annealing-induced defects and optical degradation in sputter-deposited silicon nitride: Implications for photonic applications

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Enhanced Second-Order Nonlinearities at Strained Ultrasharp Zigzag Edges in Multilayer MoS₂

Enhanced Second-Order Nonlinearities at Strained Ultrasharp Zigzag Edges in Multilayer MoS₂