Vertical section AgIn5Se8–CdIn2Se4 and crystal structure of the AgIn5Se8 compound (4T-polytype)

Ivashchenko, I. A.; Gulay, L. D.; Zmiy, O. F.; Olekseyuk, I. D.

doi:10.1016/j.jallcom.2005.04.222

Cited by 9 publications

(4 citation statements)

References 3 publications

(4 reference statements)

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“…The major part of this section is quasibinary [10]. The part 0-5 mol.% AgIn 5 Se 8 and 1170-1195 K is nonquasibinary due to the incongruent melting of the CdIn 2 Se 4 compound.…”

Section: The Vertical Section Agin 5 Se 8 − Cdin 2 Sementioning

confidence: 99%

Phase equilibria in the quasiternary system Ag2Se–CdSe–In2Se3

Ivashchenko¹,

Zmiy²,

Olekseyuk³

2008

Chem. Met. Alloys

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The quasiternary system Ag 2 Se-CdSe-In 2 Se 3 was investigated by differential thermal analysis, XRD, microstructure analysis and microhardness measurements. From the results of the investigation and literature data, six vertical sections, the isothermal section at 820 K and the liquidus surface projection were constructed. The nature and the temperatures of the invariant processes in the Ag 2 Se-CdSe-In 2 Se 3 system were determined. The existence of a quaternary compound, Ag 0.4 Cd 0.4 In 6.3 Se 10 , was established; the compound melts incongruently at 1055 K. Phase diagram / Thermal analysis / X-ray powder diffraction / Ag 2 Se-CdSe-In 2 Se 3

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“…The major part of this section is quasibinary [10]. The part 0-5 mol.% AgIn 5 Se 8 and 1170-1195 K is nonquasibinary due to the incongruent melting of the CdIn 2 Se 4 compound.…”

Section: The Vertical Section Agin 5 Se 8 − Cdin 2 Sementioning

confidence: 99%

Phase equilibria in the quasiternary system Ag2Se–CdSe–In2Se3

Ivashchenko¹,

Zmiy²,

Olekseyuk³

2008

Chem. Met. Alloys

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“…AgIn 5 S 8 has been obtained by different techniques such as thermal evaporation in one stage using AgIn 5 S 8 single crystals as a source material [1], or two stages using thermal evaporation of precursor metals and sulfurization [7], microwave hydrothermal synthesis [8], pulsed laser deposition [9], growth solution techniques as chemical deposition [10,11], one-pot synthesis [12] and low-temperature water bath deposition process to obtain AgIn 5 S 8 nanocomposite [13]. AgIn 5 Se 8 has been synthetized from the elementary components at 1200 K in a quartz evacuated ampoule and subsequently annealed at 820 K for 300 h [14]. Alloys of AgIn 5 S 8-x Se x have been prepared by sintering stoichiometric mixtures of the binary compounds Ag 2 S and Ag 2 Se disposed at 773 K from the elements; and In 2 S 3 and In 2 Se 3 disposed at 1073 K from the elements, in evacuated and sealed silica ampoules at 1073 K and heated for 72 h at 1073 K [15].…”

Section: Introductionmentioning

confidence: 99%

“…Also, conductivity activation energies of 155 and 78 meV, in the temperature regions of 230-300 K and 90-220 K, respectively; and a density of localized states of 1.17 9 10 20 cm -3 eV -1 , were reported [23]. On the other hand, previous work on ternary AgIn 5 Se 8 compound and AgIn 5 S 8 -AgIn 5 Se 8 system have been focused in structural and compositional analysis [4,14,15]. Seebeck coefficients for spark plasma sintering AgIn 5 Se 8 are negative, which indicates that the majority of charge carriers are electrons (n-type) [5].…”

Section: Introductionmentioning

confidence: 99%

Thin films of AgIn5(S/Se)8 prepared in a two stage process

Lazcano

Messina

Campos

et al. 2016

J Mater Sci: Mater Electron

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“…Among II-III-VI group ternary compounds, Cadmium indium selenide (CdIn 2 Se 4 ) is one of the interesting semiconductors due to its optical absorption property with a narrow band gap and a low electrical resistance [4,5]. Because of its narrow band gap, CdIn 2 Se 4 compound is also widely used in optoelectronic devices [2], non-linear optics [6], semiconducting devices, radiation detectors, laser materials, thermoelectric devices, solar energy converters etc.…”

Section: Introductionmentioning

confidence: 99%