Vertical poly-Si select pn-diodes for emerging resistive non-volatile memories

Oxygen Ion Drift‐Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOx and Hetero TiOx/TiON/TiOx Triple Multilayer Frameworks

“…As such, the integration of a selection device, such as a diode or transistor, is required at each node 9. The use of a selection device in practical memory devices has been hindered and much effort has been dedicated toward the development of both ReRAM crossbar arrays on a silicon‐based complementary metal‐oxide semiconductor (CMOS) transistor and rectifying diodes 10–14. Therefore, control and manipulation of multiple sneak path problems is one of the key approaches that have been employed in the development of high density crossbar ReRAM devices.…”

Progress in rectifying-based RRAM passive crossbar array

“…Nevertheless, these three basic requirements are difficult to be satisfied simultaneously in one Zener diode to match the performance of RRAM cell, which presents difficulties for the development of 1D1R structure based on bipolar RRAM [17]. Considering the different materials used in the diodes, the types of diodes employed in the 1D1R structure mainly include Si-based diode [18,19], oxide-based diode [16,[20][21][22] and polymer-based diode [23,24]. Cho et al [19] have fabricated the Schottky-type Al/p-Si diode with a rectification ratio as high as 10 4 at ±2.3 V (as shown in Figure 7(a)).…”

“…Even though amorphous silicon (-Si) does not require high processing temperature, its current density is quite low (<10 3 A/cm 2 ) due to its large bulk resistance [16]. Polycrystalline-Sibased diodes cannot be integrated into the BEOL as the processing temperature, especially for the activation of dopants, is so high that it exceeds the maximum temperature limit in the BEOL [18]. Consequently, oxide materials are better candidates for diodes, due to their simple growing processing, low temperature growth, possibility to grow on an arbitrary material.…”

“…As an antifuse, the fresh device can be set to a low resistance state and kept in LRS permanently with a rectification ratio exceeding 10 4 . As is shown in Figure 8, the memory devices exhibit a large ON/OFF ratio of about 10 6 , narrow resistance Table 1 Partially reported rectifying diodes for 1D1R application Diode type Diode structure Current density F / R ratio Fabrication temperature p-Si/n-Si [18] > 10 5 A/cm 2 >10 5 @1 V >1000°C Si-based diodes Al/p-Si [19] -10 4 @2.3 V -p-NiO x /n-TiO x [14] 5×10 3 A/cm 2 @3 V 10 5 @±3 V <300°C p-CuO x /n-InZnO x [16] 3.5×10 4 A/cm 2 @2.45 V 10 6 @±2.45 V Room temperature Oxide-based diodes (p-n junction type) p-NiO x /n-ITO x [28] > 10 4 A/cm 2 @1.5 V <10 3 Ambient temperature (In,Sn) 2 O 3 /TiO 2 /Pt [15] 400 A/cm 2 @1 V 1.6×10 4 @±1 V 250°C Pt/TiO x /Pt [21] 50 A/cm 2 @-1 V 10 3 @ ±1 V 200°C Oxide-based diodes (schottky type) Ag/ZnO/Ti/Au [22] 10 4 A/cm 2 >10 7 100°C…”

Three-Dimensional Crossbar Arrays of Self-rectifying Si/SiO2/Si Memristors

“…To address this issue, selector devices such as rectifying diodes 18 , nonlinear bidirectional selector [19][20][21][22] and complementary resistive switches 23,24 have been proposed and demonstrated to suppress the sneak path current through the unselected devices. Silicon-based selector devices [25][26][27] , such as diodes and transistors, provide promising solutions because of materials compatibility and process maturity. To fabricate these selector devices, epitaxy growth of Si diodes [28][29][30] , chemical vapour deposition of polysilicon diodes 26 and amorphous silicon diodes have been employed.…”