Vertical PIN ultraviolet photodetectors based on 4H‐SiC homoepilayers

Liu, X. F.; Sun, Guangming; Li, J. M.; Jin, Ning; Zhao, Yukun; Luo, Man; Wang, L.; Zhao, Weiyao; Zeng, Yu

doi:10.1002/pssc.200674256

Cited by 6 publications

(4 citation statements)

References 9 publications

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“…Among them 4H-SiC has the advantages of high quality commercially available wafer and more mature preparation technology to fabricate the UV detector. Various types of 4H-SiC based detectors have been reported such as PiN diodes, Schottky barrier diodes, metalsemiconductor-metal (MSM) photodetectors [1][2][3]. For some applications where the weak UV light signal should be detected, a detector with inherent gain is necessary.…”

Section: Introductionmentioning

confidence: 99%

Design and Simulation of 4H-SiC MESFET Ultraviolet Photodetector with Gain

Bai

Li²,

Shen

et al. 2017

MSF

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The 4H-SiC ultraviolet detector of the MESFET structure with gain is proposed and simulated in this paper. The Schottky gate of MESFET is transparent or semi-transparent to allow more of the incident UV light to be absorbed in the device. The effect of the doping and thickness of the channel layer on the photocurrent of the 4H-SiC MESFET UV detector is simulated and the effect mechanism is analyzed. The simulation results show that the 4H-SiC MESFET exhibits photocurrent below 380 nm. And only when the channel of the 4H-SiC MESFET is in the open state there will be a gain in the detector. Shorter gate length is beneficial to improve the responsivity and the gain of the 4H-SiC MESFET UV detector. When the gate length is set to 10 μm with the channel thickness of 0.3 μm and channel doping of 1×1017 cm-3, the peak responsivity and the gain are calculated to be 12.9 A/W and 55.6 respectively.

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Section: Introductionmentioning

confidence: 99%

Design and Simulation of 4H-SiC MESFET Ultraviolet Photodetector with Gain

Bai

Li²,

Shen

et al. 2017

MSF

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“…Silicon carbide (SiC) has been considered to be a new generation semiconductor material for optoelectronic and power devices due to its wide band gap (3.26 eV for 4H-SiC), high break down electric field (3.0 MV/cm for 4H-SiC) and high thermal stability (4.9 W/cm K for 4H-SiC). In the recent decade, SiC-based ultraviolet (UV) photodetectors have been improved and developed greatly with all sorts of structures including Schottky diodes [1][2][3], metal-semiconductor-metal (MSM) [4][5][6], p-i-n [7][8][9], metal-insulator-semiconductor (MIS) [10] and avalanche photodiodes (APD) [11][12][13] for application in flame detection, ozone-hole sensing, short-range communication, etc. Generally, the photons can be absorbed in 4H-SiC overall below 360 nm except that more than 20% of them are reflected, as shown in Figure 1(a).…”

Section: Introductionmentioning

confidence: 99%

High-responsivity SiC Ultraviolet Photodetectors with SiO2 and Al2O3 Films

Zhang¹

2015

Advanced Silicon Carbide Devices and Processing

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Silicon carbide SiC has shown considerable potential λor ultraviolet UV photodetectors due to its properties such as wide band μap . eV λor H-SiC , hiμh break down electric λield and hiμh thermal stability. H-SiC-based UV photodetectors such as Schottky, metal-semiconductor-metal MSM , metal-insulator-semiconductor MIS and avalanche have been presentinμ excellent perλormance λor UV detection application in λlame detection, ozone-hole sensinμ, short-ranμe communication, etc.Generally, the most widely used antireλlection coatinμ and passivation layer λor HSiC-based photodetectors are native SiO μrown by heatinμ H-SiC in O in order to improve the absorption and passivation oλ photodetectors. Nevertheless, the thermally μrown SiO sinμle layer suλλers λrom hiμh reλlection, larμe absorption and inaccurate thickness. Thereλore, in this chapter, UV antireλlection coatinμs were desiμned, λabricated and applied in order to reduce optical losses and improve the quantum eλλiciency QE oλ H-SiC-based photodetectors. The important results will be introduced as λollows Accordinμ to transparent ranμe, extinction coeλλicient, reλractive index, mechanical properties and chemical reliability, Al O and SiO λilms were selected in tens oλ optical λilm materials as antireλlection coatinμs on H-SiC-based UV photodetectors. SiO λilm was desiμned between Al O λilm and H-SiC substrate and Al O λilm was deposited on SiO λilm accordinμ to its reliability. The optical thicknesses oλ Al O and SiO λilm were desiμned accordinμ to the admittance matchinμ technoloμy. Al O /SiO λilms were deposited on H-SiC substrates by usinμ electron-beam evaporation accordinμ to the λilm's desiμn. The minimum reλlectance oλ the λilms was . % at nm, which is the minimum attained so λar. The minimum reλlectance shiλted to shorter wavelenμths with the increase oλ annealinμ temperature due to reduction oλ λilm thickness.The surλace μrains appeared to μet larμer in size and the root mean square RMS rouμhness oλ the annealed λilms increased with annealinμ temperature but was less than that oλ the as-deposited. Althouμh the Al O /SiO λilm was kept amorphous, there were diλλusion that Al silicates and Si suboxides were λormed at the interλace between λilms and H-SiC substrate.H-SiC-based MSM UV photodetectors with Al O /SiO λilms have been λabricated and compared with SiO / H-SiC MSM detectors. The photocurrent oλ the λormer was twice as larμe as the latter, while the dark current was also larμer. The Al O /SiO / HSiC devices showed a peak responsivity oλ . A/W at nm under V, which was twice as much as that oλ MSM detectors. The internal and external QE oλ the Al O / SiO / H-SiC devices were % and % at nm, respectively, which are the hiμhest attained so λar λor H-SiC-based MSM photodetectors. The responsivity oλ the Al O / SiO / H-SiC devices aμreed well with their surλace reλlectance oλ -nm.The Al O /SiO λilms prepared by oxidation and electron-beam evaporation were applied on H-SiC-based MIS photodiodes. The dark current oλ the devices was pA, which was larμer...

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“…Various structure types of 4H-SiC UV PDs have been studied, including Schottky PD [10,11], metal-semiconductor-metal PD [12,13], traditional p-i-n PD [14], traditional separated-absorption-multiplication (SAM) avalanche photodiode (APD) [15], and junction field-effect transistor [16]. The traditional 4H-SiC p-i-n PD has the merits of low operation voltage, high and bias-independent photoresponse, low-noise and high response speed [17,18].…”

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confidence: 99%

A dual P‐layer 4H‐SiC p‐i‐n photodetector for the detection from extreme ultraviolet to ultraviolet‐A

Zhang,

Liu,

Liu

et al. 2023

Electronics Letters

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A dual P‐layer 4H‐SiC p‐i‐n ultraviolet photodetector is proposed and studied. The modeling results of the photoelectric characteristics demonstrate the dual P‐layer structure could effectively reduce the recombination of the photogenerated carriers and separate more electron‐hole pairs near the surface of the device. And, the photodetector exhibits a significantly high response and detectivity, especially in the wavelength range of extreme ultraviolet to ultraviolet‐C. A high spectral response peak of 0.2 A/W corresponding to a quantum efficiency of 95.3% is achieved. Furthermore, an avalanche breakdown voltage as low as 182 V is observed. The dual P‐layer structure significantly presents an innovative approach for the advancement of future ultraviolet photodetectors applied in the detection at illumination wavelengths ranging from extreme ultraviolet to ultraviolet‐A.

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Vertical PIN ultraviolet photodetectors based on 4H‐SiC homoepilayers

Cited by 6 publications

References 9 publications

Design and Simulation of 4H-SiC MESFET Ultraviolet Photodetector with Gain

Design and Simulation of 4H-SiC MESFET Ultraviolet Photodetector with Gain

High-responsivity SiC Ultraviolet Photodetectors with SiO2 and Al2O3 Films

A dual P‐layer 4H‐SiC p‐i‐n photodetector for the detection from extreme ultraviolet to ultraviolet‐A

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