Vertical Manipulation of Individual Atoms by a Direct STM Tip-Surface Contact on Ge(111)

Dujardin, Gérald; Mayne, Andrew J.; Robert, Olivier; Rose, Franck; Joachim, Christian; Tang, Hao

doi:10.1103/physrevlett.80.3085

Cited by 107 publications

(86 citation statements)

References 25 publications

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“…However, a careful study shows that during the process of bringing the tip closer to the adatom, the barrier to jump to the tip does vanish at a certain height (tip-substrate distance) and the adatom can be pulled to the tip apex [5,6]. We present in Figs.…”

Section: Vertical Manipulationmentioning

confidence: 99%

“…Individual atoms and molecules have been manipulated to move both laterally and vertically by this instrument in a number of research laboratories [1][2][3][4][5][6][7]. This technique opens the way for a variety of technological applications including nanostructuring of surfaces and manipulation of chemical reactions -both of which are important to the fruition of some of the expectations from nanotechnology.…”

Section: Introductionmentioning

confidence: 99%

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Theoretical aspects of vertical and lateral manipulation of atoms

2002

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Using total energy calculations, based on interaction potentials from the embedded atom method, we show that the presence of the tip not only lowers the barrier for lateral diffusion of the adatom towards it, but also shifts the corresponding saddle point. For a Cu adatom at a (100) microfacetted step on Cu(111) this shift is 0.6 o A . The effect of the tip geometry and shape on the energetics of lateral manipulation was found to be subtle. In the case of vertical manipulation of a Cu adatom on flat, stepped, and kinked Cu surfaces we find an unusual but interesting result. It is found that as the tip approaches the surface, it becomes easier to extract the adatom from the stepped and the kinked surfaces, as compared to the flat surface. This counter intuitive result can be explained in terms of tip induced changes in the bonding of the adatom to its low coordinated surroundings.

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Section: Vertical Manipulationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Theoretical aspects of vertical and lateral manipulation of atoms

2002

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“…Vertical processes involve atom transfers between the tip and the surface, voltage pulse or direct tip-surface contact being used for the atom transfers. Adsorbates or native surface atoms can be either permanently extracted by the tip 11,12,13,14,15,16,17,18,19,20,21,22 or redeposited in another location 23,24,25,26 . This mode has been theoretically studied by several groups 27,28,29,30,31,32,33 .…”

Section: Introductionmentioning

confidence: 99%

Theory of single atom manipulation with a scanning probe tip: Force signatures, constant-height, and constant-force scans

Pizzagalli

Baratoff

2003

Phys. Rev. B

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We report theoretical results predicting the atomic manipulation of a silver atom on a Si(001) surface by a scanning probe tip, and providing several new insights about the manipulation phenomena. A molecular mechanics technique has been used, the system being described by a quantum chemistry method for the short-range interactions and an analytical model for the long-range ones. Taking into account several shapes, orientations, and chemical natures of the scanning tip, we observed four different ways to manipulate the deposited atom in a constant-height mode. In particular, the manipulation is predicted to be possible with a Si(111) tip for different tip shapes and adatom locations on the silicon surface. The calculation of the forces during the manipulation revealed that specific variations can be associated with each kind of process. These force signatures, like the tip height signatures observed in STM experiments, could be used to deduce the process involved in an experiment. Finally, we present preliminary results about the manipulation in constant-force mode.

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“…The proposedmethod is very robust and doesnot require applied voltage betweenthe nanotubetips and the surface. The simulation results are timely in the sensethat external voltage assistednanotube-nanolithography [19]and arrays of "traditional" SPM tips m parallel [20] and tunnel-free [18] …”

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confidence: 99%

Nanoscale etching and indentation of a silicon(001) surface with carbon nanotube tips

1999

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The possibility of nanoscale etching and indentation of a Si{001}(2 × 1) surface by (8,0) and (10,10) carbon nanotube tips is demonstrated, for the first time, by classical molecular dynamics simulations employing Tersoff's many-body potential for a mixed C/Si/Ge system. In the scenario with the nanotube tip barely touching the surface atomistic etching is observed, whereas in the nanoindentation scenario, the nanotube tip penetrates the surface without much hindrance. The results are explained in terms of the relative strength of the C-C, C-Si, and Si-Si bonds.

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Vertical Manipulation of Individual Atoms by a Direct STM Tip-Surface Contact on Ge(111)

Cited by 107 publications

References 25 publications

Theoretical aspects of vertical and lateral manipulation of atoms

Theoretical aspects of vertical and lateral manipulation of atoms

Theory of single atom manipulation with a scanning probe tip: Force signatures, constant-height, and constant-force scans

Nanoscale etching and indentation of a silicon(001) surface with carbon nanotube tips

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