Vertical InAs/InGaAs Heterostructure Metal–Oxide–Semiconductor Field-Effect Transistors on Si

Abstract

III-V compound semiconductors offer a path to continue Moore's law due to their excellent electron transport properties. One major challenge, integrating III-V's on Si, can be addressed by using vapor-liquid-solid grown vertical nanowires. InAs is an attractive material due to its superior mobility, although InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) typically suffer from band-to-band tunneling caused by its narrow band gap, which increases the off-current and therefore the power consumption. In this work, we present vertical heterostructure InAs/InGaAs nanowire MOSFETs with low off-currents provided by the wider band gap material on the drain side suppressing band-to-band tunneling. We demonstrate vertical III-V MOSFETs achieving off-current below 1 nA/μm while still maintaining on-performance comparable to InAs MOSFETs; therefore, this approach opens a path to address not only high-performance applications but also Internet-of-Things applications that require low off-state current levels.

Cross‐Point Arrays with Low‐Power ITO‐HfO2 Resistive Memory Cells Integrated on Vertical III‐V Nanowires

“…However, to further improve the margin for the required high voltage tolerance of the transistor, it is possible to change the composition of the nanowire on the drain side to InGaAs, where VNW‐FETs withstanding a drain–source voltage ( V DS ) of 1.5 V at multiple gate‐source voltage ( V GS ) points without degradation are demonstrated for a d NW of 28 nm. [ 26 ] According to the oxide thickness trend in Figure 3a, scaling the switching oxide would also reduce the required voltage during forming. To maintain an achievable 100x R HRS / R LRS ‐ratio, it can be estimated that a 1.7 nm HfO 2 thickness is needed.…”

Low-frequency noise in nanowire and planar III-V MOSFETs

“…A schematic of the device structure is provided in Fig. 1(a) and details about the processing can be found in [14]. Fig.…”

Quantitative analysis of time-resolved RHEED during growth of vertical nanowires

“…Semiconductor nanowires (NWs) are promising building blocks for future devices like transistors, 1,2 light-emitting diodes (LEDs), 3 lasers, 4 solar cells 5,6 or sensors. 7,8 The synthesis of semiconductor NWs is often realized by the vapourliquid-solid (VLS) growth, which involves a liquid metal droplet on top of the growing NWs.…”