Vertical hole transport through unipolar InGaN quantum wells and double heterostructures

Carrier localization in III-nitride versus conventional III-V semiconductors: A study on the effects of alloy disorder using landscape theory and the Schrödinger equation

“…This study shows that the solution of the novel LL equation is an elegant method and provides a remarkable view of the impact of compositional disorder in many semiconductors. Thus far, it has also provided the only path to full 3D computations of light-emitting devices [13] and other novel transport structures [14,15] that include alloy disorder.…”

“…Therefore, one should not expect effects of carrier localization in light-emitting devices. This is not to say that disorder does not play any role in such devices: it has been shown that compositional fluctuations and their resulting effective potential play a major role in decreasing the operating voltage in LEDs with multiple quantum wells and other novel transport structures due to the percolating current paths induced in vertical transport [13][14][15].…”

“…It provides a useful potential that, when implemented in classical drift-diffusion equations, describes the percolation paths followed by carriers in disordered systems. This potential has been very effective at simulating vertical transport across structures with multiple quantum wells in LEDs [13] as well as unipolar p-type nitride heterostructures [14,15]. Besides that, solving the LL equation is much faster than solving the Schrödinger eigenvalue problem.…”