Vertical hexagonal GaN nanorods grown on (111)Si substrate

Hsiao, Ching‐Lien; Tu, Li‐Wei; W., T.; Wu, Jamafon Jian-Feng; Hsieh, Kuang-Yeu; Lo, Ikai

doi:10.1117/12.476564

SPIE Proceedings

2003

DOI: 10.1117/12.476564

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Vertical hexagonal GaN nanorods grown on (111)Si substrate

Ching‐Lien Hsiao

Li‐Wei Tu

T. W.

et al.

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Buffer controlled GaN nanorods growth on Si(111) substrates by plasma-assisted molecular beam epitaxy

Hsiao

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Size, shape, and density of self-assembled GaN nanorods grown on Si͑111͒ substrates by plasma-assisted molecular beam epitaxy were successfully controlled by inserting a GaN buffer layer. The structure of the GaN buffer layer plays a vital role in the nanorod growth. Only a broken buffer layer with a suitable opening size can grow nanorods. Evolution of the nanorod is traced to the initial growth stage. Crystal seed grown at the wall of the opening in the buffer layer initiates the beginning of the nanorod, and a self-catalytic vapor-liquid-solid process, triggered by the nanocapillary condensation effect, enhances the GaN nanorod growth. Furthermore, the nanorod density can be largely controlled by using the beam equivalent pressure of the N / Ga ratio. Other GaN nanostructures grown at different growth conditions are also discussed in details.

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Buffer controlled GaN nanorods growth on Si(111) substrates by plasma-assisted molecular beam epitaxy

Hsiao

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Polycrystalline to Single-Crystalline InN Grown on Si(111) Substrates by Plasma-Assisted Molecular-Beam Epitaxy

Hsiao¹,

Tu²,

Chen³

et al. 2005

Jpn. J. Appl. Phys.

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We report on the growth of InAs quantum dots (QDs) on GaInAsP and InP buffers by metal-organic chemical vapour deposition on InP(100) substrates. Indium segregation and the As-P exchange reaction affect the QD nucleation and composition. The As-P exchange reaction has a more pronounced effect on the QDs grown on the InP buffer than on those grown on the GaInAsP buffer. A very thin (0.6 nm) GaAs interlayer grown between the buffer layer and the InAs QD layer consumes segregated indium and minimizes the As/P exchange reaction. Wavelength tuning from 1450 to 1750 nm covering the technologically important 1550 nm wavelength is also achieved for the InAs QDs grown with the thin GaAs interlayer.

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Vertical hexagonal GaN nanorods grown on (111)Si substrate

Cited by 2 publications

References 0 publications

Buffer controlled GaN nanorods growth on Si(111) substrates by plasma-assisted molecular beam epitaxy

Buffer controlled GaN nanorods growth on Si(111) substrates by plasma-assisted molecular beam epitaxy

Polycrystalline to Single-Crystalline InN Grown on Si(111) Substrates by Plasma-Assisted Molecular-Beam Epitaxy

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