“…[1][2][3][4][5] To date, several approaches have been adopted to fabricate graphene, including mechanical exfoliation, 1 chemical exfoliation, 6 chemical synthesis, 7,8 epitaxial growth, 9 and chemical vapor deposition (CVD). [10][11][12] In particular, plasmaenhanced chemical vapor deposition (PECVD) has emerged as a promising new route to fabricate graphene with unique properties in a controllable, low-temperature, highly-efficient, and catalystfree manner for various applications such as supercapacitors, 11,13 photocatalysis, 14 transistors, 15 sensors, 16,17 and solar vapor generation. 18,19 During PECVD growth, factors such as plasma power, pressure, precursor composition, growth time, and substrate type can significantly affect the properties of graphene (e.g., morphology and quality) and its performance in practical applications.…”