Vertical GaN Split Gate Trench MOSFET with Improved High Frequency FOM

A comparative analysis and an optimized structure of vertical GaN floating gate trench MOSFET for high-frequency FOM

“…An incomplete ionization model was performed as doping impurities in GaN have higher activation energy. The simulations models for vertical GaN power transistors were chosen based on earlier published papers [18,26,31]. An excellent agreement is found between our simulation model and experiment [14] as reported in [25,26].…”

“…However, with the increased deep trench into the drift layer, the C GD enhances and affects the switching delays. The split gate trench power MOSFET (SGT-MOSFET) is an attractive device structure that comprises two electrodes in a gate trench [25,26]. A top electrode serves as the gate electrode to control the channel formation of the MOSFET as in the TG-MOSFET.…”

An Optimized Vertical GaN Parallel Split Gate Trench MOSFET Device Structure for Improved Switching Performance

“…According to the report in ref. [27], [35], the selected simulation models and the experiment [23] have a very good level of agreement with one another. At the gate dielectrics-trench contact, a fixed charge concentration of approximately 1.5 ×10 12 cm −2 was implemented so that it achieves the desired match of the threshold voltage [43].…”

“…The device characteristics were calibrated amongst the experimental results of a fabricated TG-MOSFET, described by R. Li et al [23] using TCAD simulation [41]. The TCAD device simulation methodology and important physics models have been reported in the previous work [27], [35]- [38], as shown in Table 1. TCAD Sentaurus provides users with access to a wide variety of physical models, each of which is designed to explain the physical behavior of semiconductor devices as precisely as is technically feasible in relation to the fabricated device.…”

“…Because of their normally-off behavior, suitability for having the peak elec-tric field (E-field) distant from the surface, and capacity to handle larger power densities. Some of the earlier reports demonstrated that the device performance of 600 V GaN vertical transistors are based on the structure; such as the MOS channel [23], quasi vertical [24], fully vertical [25], regrowth channel types [26], and split gate power MOS-FET [27]. Among these structures, the MOS channel based GaN vertical trench gate MOSFET (TG-MOSFET) design has a significantly smaller on-resistance due to the lack of a junction field effect transistor (JFET) region [28]- [31], leading to low switching loss.…”