Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown

Fukushima, Hayata; Usami, Shigeyoshi; Ogura, Mariko; Ando, Yoshinobu; Tanaka, Atsushi; Deki, Manato; Kushimoto, Maki; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi

doi:10.7567/1882-0786/aafdb9

Cited by 67 publications

(43 citation statements)

References 31 publications

(35 reference statements)

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“…As shown in Fig. 5a, with more than 10 µm depth of mesa structure in vertical PNDs, nondestructive BV and avalanche characteristics were confirmed [73].…”

Section: Mesa Terminationmentioning

confidence: 56%

“…As a relatively simple termination structure, an implantation-based technique was investigated in GaN devices, which includes the compensating species (e.g., O, H, and Zn) or inert species (e.g., Ar, N, He, and Kr) to create deep-level traps in the Fig. 5 a PNDs with deeply etched mesa structure; b PNDs with two-step mesa [73,74] Fig. 6 Schematic cross of PND structure with a bevel mesa and FP structure, b PND epitaxial structure is simulated by treating N A , N D and θ as variable [76,77] termination regions [78][79][80][81][82].…”

Section: Ion Treatmentmentioning

confidence: 99%

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Review of Recent Progress on Vertical GaN-Based PN Diodes

Younis

Chiu

et al. 2021

Nanoscale Res Lett

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As a representative wide bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric field). Vertical GaN devices have been investigated, are regarded as one of the most promising candidates for power electronics application, and are characterized by the capacity for high voltage, high current, and high breakdown voltage. Among those devices, vertical GaN-based PN junction diode (PND) has been considerably investigated and shows great performance progress on the basis of high epitaxy quality and device structure design. However, its device epitaxy quality requires further improvement. In terms of device electric performance, the electrical field crowding effect at the device edge is an urgent issue, which results in premature breakdown and limits the releasing superiorities of the GaN material, but is currently alleviated by edge termination. This review emphasizes the advances in material epitaxial growth and edge terminal techniques, followed by the exploration of the current GaN developments and potential advantages over silicon carbon (SiC) for materials and devices, the differences between GaN Schottky barrier diodes (SBDs) and PNDs as regards mechanisms and features, and the advantages of vertical devices over their lateral counterparts. Then, the review provides an outlook and reveals the design trend of vertical GaN PND utilized for a power system, including with an inchoate vertical GaN PND.

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“…As shown in Fig. 5a, with more than 10 µm depth of mesa structure in vertical PNDs, nondestructive BV and avalanche characteristics were confirmed [73].…”

Section: Mesa Terminationmentioning

confidence: 56%

Section: Ion Treatmentmentioning

confidence: 99%

Review of Recent Progress on Vertical GaN-Based PN Diodes

Younis

Chiu

et al. 2021

Nanoscale Res Lett

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“…[ 57 ] Note that the differences in surface morphologies can also affect impurity incorporation during MOCVD growth. [ 58,59 ] As shown in Figure 6c,d, the AFM images reveal smooth microscopic surface morphology and clear atomic steps for both films, which indicate high crystal quality under step flow growth mode. The root mean square (RMS) of samples grown under 2 and 5.2 μm h −1 is 0.474 and 0.647 nm for a scanning area of 10 × 10 μm 2 , respectively.…”

Section: Resultsmentioning

confidence: 82%

Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications

Zhang

Chen

et al. 2021

Physica Status Solidi (a)

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The development of high‐quality gallium nitride (GaN) epitaxy with thick drift layer, low controllable doping, and high mobility is key for vertical high‐power devices. Herein, the effect of increasing trimethylgallium (TMGa) molar flow rate on the growth rate, impurity incorporation, charge compensation, surface morphology, and carrier mobility is systematically studied. An optimized metalorganic chemical vapor deposition GaN growth condition with a typical growth rate of 2 μm h−1 is used as the baseline. With significant suppression of background Si, other impurity concentrations, and a precise control of the doping precursor SiH4 flow, an electron concentration as low as 4 × 1015 cm−3 in n−‐GaN is achieved. Through increasing the TMGa flow rate, the GaN growth rate is increased to 5.2 μm h−1. Secondary ion mass spectroscopy results show that the background H, O, and Mg remain below detection limit, but C level is increased to 2 × 1016 cm−3. GaN growth on Mn‐doped semi‐insulating GaN substrate is performed to probe the transport properties of film with low dislocation densities. Hall measurement shows that an electron mobility decreases from 852 to 604 cm2 V−1 s−1 as the growth rate increases. Results from this work reveal the challenge and guidance for achieving GaN vertical high power devices.

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“…Wide-bandgap GaN-based high electron mobility transistors (HEMTs) are promising candidates in the applications of high-frequency and high-power electronics owing to their superior material properties such as large bandgap, high critical breakdown field, and high-density carriers in the form of two-dimensional electron gas (2DEG) with high mobility over 2000 cm 2 /V•s [1][2][3][4][5]. Nowadays, much progress has been achieved in GaN-based HEMTs with the development of the material quality and the innovation of the device structure [6,7].…”

Section: Introductionmentioning

confidence: 99%

A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure

et al. 2019

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A novel structure scheme by transposing the gate channel orientation from a long horizontal one to a short vertical one is proposed and verified by technology computer-aided design (TCAD) simulations to achieve GaN-based normally-off high electron mobility transistors (HEMTs) with reduced on-resistance and improved threshold voltage. The proposed devices exhibit high threshold voltage of 3.1 V, high peak transconductance of 213 mS, and much lower on-resistance of 0.53 mΩ·cm2 while displaying better off-state characteristics owing to more uniform electric field distribution around the recessed gate edge in comparison to the conventional lateral HEMTs. The proposed scheme provides a new technical approach to realize high-performance normally-off HEMTs.

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Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown

Cited by 67 publications

References 31 publications

Review of Recent Progress on Vertical GaN-Based PN Diodes

Review of Recent Progress on Vertical GaN-Based PN Diodes

Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications

A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure

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