Vertical Ga₂O₃ MOSFET With Magnesium Diffused Current Blocking Layer

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

“…Later, the same group reported on an N implantation based Ga 2 O 3 CAVET [438], demonstrating a breakdown voltage of 253 V with a decent on-off ratio of 10 7 , but a large specific resistance of 135 mΩ•cm 2 . In contrast to the use of implantation technology, Zeng et al utilized an Mg-diffusion process (figure 32(c)) to form a current blocking layer [441], thus avoiding unwanted Mg diffusion during the post-annealing process. The prototype exhibited normally-off operation and a high on-off ratio of 10 8 .…”

Design and simulation of high performance β-Ga2O3 super barrier rectifier with a current blocking layer

“…Taking advantage of this high resistance property, high-performance devices with current-blocking or field-terminating surface layers have been developed one after another. Notably, it is proven that electrons in the above block layer can be accumulated with applied voltage leading to a conductive channel [14][15][16][17][18]. Therefore, the selective semi insulating doping technology has relieved the embarrassment of lacking P-type doping.…”

Homoepitaxial growth of 1ˉ02 β-Ga2O3 by halide vapor phase epitaxy

“…grown on the native substrates without being suffered from lattice mismatch and resulting defects when an appropriate plane is selected. These features make β-Ga 2 O 3 an attractive candidate material for future power device applications, and promising device prototypes including Schottky barrier diodes (SBDs) [13][14][15][16], heterojunction p-n diodes [4,17], modulation-doped field-effect transistors (FFTs) [18,19], and metal-oxide-semiconductor FETs (MOSFETs) [20][21][22][23][24] have been reported.…”