Vertical 1T’‐WTe₂/WS₂ Schottky‐Barrier Phototransistor with Polarity‐Switching Behavior

Abstract

In recent years, 2D reconfigurable phototransistors (RPTs) have been applied in broadband convolutional processing, retinomorphic hardware devices, and non‐volatile memorizers. However, there has been a lack of investigation into all‐2D Schottky junctions used in RPT with polarity control behavior. Herein, a vertically stacked multilayered WS2/WTe2 Schottky RPT is reported. The semimetal characteristics of 1T’‐WTe2 is designed to form a built‐in electric field of 69 meV across the heterojunction and WS2 exhibits gate‐tunable characteristics. Therefore, reconfigurable rectifying behavior and self‐driven bidirectional photo response can be achieved. The phototransistor possesses a gate‐tunable rectification ratio ranging from 10−2 to 105, and the corresponding logic half‐wave rectifier shows excellent switchable rectifying states. Under 635 nm illumination, the responsivity can be adjusted from −1325 to 430 mA W−1 with reversed signs. Meanwhile, the maximum power conversion efficiency is 2.84%, and the specific detectivity is 1.47 × 1012 Jones. The device shows both negative and positive responsivity with linear gate dependence within a voltage window of 10 V. Impressively, nonvolatile photovoltaic performance can be demonstrated by reversing short‐circuit current and open‐circuit voltage by applying and releasing pulsed gate voltage. Finally, reconfigurable polarization behavior, single‐pixel imaging, and the optical logic circuit are applicable to the heterostructure.

PtTe2/WS2/Pyramidal-Si van der Waals Heterojunction with Semiconformal Interfaces toward High-Performance Photodetectors

“…The photocurrents remain stable after tens of cycles at −5 V and zero bias, indicating excellent stability of the photodetector. Importantly, the performance of our device is already superior or comparable to the state-of-the-art of 2D material/Si vdW heterostructure-based photodetectors in terms of responsivity, response speed, and LDR, as demonstrated in Figure f,g. − Tables S1 and S2 present the precise values of these parameters, as reported in the literature, allowing for quantitative comparison.…”

High-Polarization-Sensitivity Polarimetric Organic Phototransistors Based on Highly Stretchable Semicrystalline Polymer Semiconductors

“…In this study, we present high-performance P-OPTs with a polarization sensitivity that exceeds 8.0 by leveraging the high stretchability, high μ, and low trap density of the PCDTFBTA implemented as photoactive layers. This polarization sensitivity value is one of the highest reported values for P-OPTs and is even higher than that of their inorganic counterparts. − ,,− Given that P-OPTs were fabricated by dry contact transfer printing at room temperature, these findings offer a facile strategy for developing high-performance and cost-effective P-OPTs. , Furthermore, these results establish new routes for utilizing stretchable polymer semiconductors to realize novel optoelectronic devices.…”

Enhanced electrical parameters of the Au/n-Si Schottky barrier diodes with graphite/graphane oxide doped PVC interlayer

“…Recently, owing to their improved performance in semiconductor substances, metal-(insulator/oxide/ polymer-semiconductor/ferroelectric)-semiconductor (MIS/MOS/MPS/MFS) structures have gained increasing attention [1][2][3][4][5]. These architectures are commonly employed in various electronic/optoelectronic applications, including sensors, phototransistors, solar cells, light-emitting diodes, logic circuits, and microwave rectifiers [6][7][8][9][10][11][12]. The insertion of a thin layer at the metal/semiconductor (M/S) surface hinders the transport of charge carriers between them, altering the conduction process/mechanisms (CPs/CMs).…”