Versatilely tuned vertical silicon nanowire arrays by cryogenic reactive ion etching as a lithium-ion battery anode

Refino, Andam Deatama; Yulianto, Nursidik; Syamsu, Iqbal; Nugroho, Andika Pandu; Hawari, Naufal Hanif; Syring, Alina; Kartini, Evvy; Iskandar, Ferry; Voss, T.; Sumboja, Afriyanti; Peiner, Erwin; Wasisto, Hutomo Suryo

doi:10.1038/s41598-021-99173-4

Cited by 47 publications

(29 citation statements)

References 84 publications

(80 reference statements)

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“…The chemical solution process involves complicated synthesis routes such as formation of solid catalyst seeds on the substrate, and requires precise control of the process parameters, such as temperature, for 1D structure formation. Refino et al reported vertical Si nanowire array anodes created in a top-down process by plasma etching 9 . Si nanowire arrays were fabricated by applying circular patterns to Si wafers as a template using photolithography, where an n-type Si wafer with high electrical conductivity was used as the active anode material.…”

Section: Introductionmentioning

confidence: 99%

Nanostructured Ge and GeSn films by high-pressure He plasma sputtering for high-capacity Li ion battery anodes

Nagai

Habu

Hayashi

et al. 2022

Sci Rep

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We fabricated nanostructured Ge and GeSn films using He radio-frequency magnetron plasma sputtering deposition. Monodisperse amorphous Ge and GeSn nanoparticles of 30–40 nm size were arranged without aggregation by off-axis sputtering deposition in the high He-gas-pressure range of 0.1 Torr. The Ge film porosity was over 30%. We tested the charge/discharge cycle performance of Li-ion batteries with nanostructured Ge and GeSn anodes. The Ge anode with a dispersed arrangement of nanoparticles showed a Li-storage capacity of 565 mAh/g after the 60th cycle. The capacity retention was markedly improved by the addition of 3 at% Sn in Ge anode. The GeSn anode (3 at% Sn) achieved a higher capacity of 1128 mAh/g after 60 cycles with 92% capacity retention. Precise control of the nano-morphology and electrical characteristics by a single step procedure using low temperature plasma is effective for stable cycling of high-capacity Ge anodes.

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Section: Introductionmentioning

confidence: 99%

Nanostructured Ge and GeSn films by high-pressure He plasma sputtering for high-capacity Li ion battery anodes

Nagai

Habu

Hayashi

et al. 2022

Sci Rep

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“…Moreover, compared to the Bosch process, which suffers from scalloping effects on the etched structures, ICP-RIE conducted at cryogenic temperatures can produce vertical Si NW arrays with high aspect ratios and smooth sidewalls [27]. Although high-aspect-ratio Si nanowires have been successfully produced by photolithography and cryogenic ICP-RIE, their use in LIBs is rarely reported [28].…”

Section: Introductionmentioning

confidence: 99%

Vertically Aligned n-Type Silicon Nanowire Array as a Free-Standing Anode for Lithium-Ion Batteries

et al. 2021

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Due to its high theoretical specific capacity, a silicon anode is one of the candidates for realizing high energy density lithium-ion batteries (LIBs). However, problems related to bulk silicon (e.g., low intrinsic conductivity and massive volume expansion) limit the performance of silicon anodes. In this work, to improve the performance of silicon anodes, a vertically aligned n-type silicon nanowire array (n-SiNW) was fabricated using a well-controlled, top-down nano-machining technique by combining photolithography and inductively coupled plasma reactive ion etching (ICP-RIE) at a cryogenic temperature. The array of nanowires ~1 µm in diameter and with the aspect ratio of ~10 was successfully prepared from commercial n-type silicon wafer. The half-cell LIB with free-standing n-SiNW electrode exhibited an initial Coulombic efficiency of 91.1%, which was higher than the battery with a blank n-silicon wafer electrode (i.e., 67.5%). Upon 100 cycles of stability testing at 0.06 mA cm−2, the battery with the n-SiNW electrode retained 85.9% of its 0.50 mAh cm−2 capacity after the pre-lithiation step, whereas its counterpart, the blank n-silicon wafer electrode, only maintained 61.4% of 0.21 mAh cm−2 capacity. Furthermore, 76.7% capacity retention can be obtained at a current density of 0.2 mA cm−2, showing the potential of n-SiNW anodes for high current density applications. This work presents an alternative method for facile, high precision, and high throughput patterning on a wafer-scale to obtain a high aspect ratio n-SiNW, and its application in LIBs.

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“…There are various forms of RIE, such as inductively coupled plasma reactive ion etching (ICP) RIE, deep reactive ion etching (DRIE), cryogenic DRIE, and Bosch DRIE. These RIE techniques are used to micro-fabricate silicon hollow micro-needles with smooth tapering [ 107 ], organic semiconductors with high-resolution displays [ 108 ], the optimization of high-aspect-ratio vertical Si nano-wire anodes for lithium-ion batteries [ 109 ], and the high fidelity and low roughness of SiC substrates for bulk acoustic wave resonators [ 110 ], investigate etching induced damage in p-type GaN at low temperatures [ 111 ] and the isotropic silicon etching of MEMS [ 112 ]. The process has some drawbacks, however, including being expensive because of the use of complex equipment, controlled conditions, and sidewall defects.…”

Section: Alternative Micro-feature Fabrication Processesmentioning

confidence: 99%

Electropolishing and Shaping of Micro-Scale Metallic Features

2022

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Electropolishing (EP) is most widely used as a metal finishing process. It is a non-contact electrochemical process that can clean, passivate, deburr, brighten, and improve the biocompatibility of surfaces. However, there is clear potential for it to be used to shape and form the topology of micro-scale surface features, such as those found on the micro-applications of additively manufactured (AM) parts, transmission electron microscopy (TEM) samples, micro-electromechanical systems (MEMs), biomedical stents, and artificial implants. This review focuses on the fundamental principles of electrochemical polishing, the associated process parameters (voltage, current density, electrolytes, electrode gap, and time), and the increasing demand for using environmentally sustainable electrolytes and micro-scale applications. A summary of other micro-fabrication processes, including micro-milling, micro-electric discharge machining (EDM), laser polishing/ablation, lithography (LIGA), electrochemical etching (MacEtch), and reactive ion etching (RIE), are discussed and compared with EP. However, those processes have tool size, stress, wear, and structural integrity limitations for micro-structures. Hence, electropolishing offers two-fold benefits of material removal from the metal, resulting in a smooth and bright surface, along with the ability to shape/form micro-scale features, which makes the process particularly attractive for precision engineering applications.zx3

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Versatilely tuned vertical silicon nanowire arrays by cryogenic reactive ion etching as a lithium-ion battery anode

Cited by 47 publications

References 84 publications

Nanostructured Ge and GeSn films by high-pressure He plasma sputtering for high-capacity Li ion battery anodes

Nanostructured Ge and GeSn films by high-pressure He plasma sputtering for high-capacity Li ion battery anodes

Vertically Aligned n-Type Silicon Nanowire Array as a Free-Standing Anode for Lithium-Ion Batteries

Electropolishing and Shaping of Micro-Scale Metallic Features

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