2016
DOI: 10.1002/adma.201602855
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Versatile Metal Nanowiring Platform for Large‐Scale Nano‐ and Opto‐Electronic Devices

Abstract: A versatile metal nanowiring platform enables the fabrication of Ag nanowires (AgNW) at a desired position and orientation in an individually controlled manner. A printed, flexible AgNW has a diameter of 695 nm, a resistivity of 5.7 μΩ cm, and good thermal stability in air. Based on an Ag nanowiring platform, an all-NW transistors array, as well as various optoelectronic applications, are successfully demonstrated.

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Cited by 75 publications
(91 citation statements)
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References 60 publications
(56 reference statements)
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“…The diameter of single CuNW was around 710 nm and it had a resistivity of 14.1 µΩ cm, which is slightly higher than that of bulk Cu (1.68 µΩ cm). By replacing the composite of PVP/CTA with that of PVP/silver trifluoroacetate/CTA, silver nanowires (AgNWs) with an average diameter of about 695 nm and low resistivity of 5.7 µΩ cm had also formed after one calcination step under ambient (350 °C, 20 min) . It should be noted that the addition of a small amount of CTA is quite essential to maintain the continuous structure of AgNW, because the formed CuO in the composite nanowires that has a high melting temperature ( T m ≈ 1326 °C) hinders the Ag agglomerated in the high temperature .…”
Section: Applications Via Ehd Direct‐writingmentioning
confidence: 99%
See 1 more Smart Citation
“…The diameter of single CuNW was around 710 nm and it had a resistivity of 14.1 µΩ cm, which is slightly higher than that of bulk Cu (1.68 µΩ cm). By replacing the composite of PVP/CTA with that of PVP/silver trifluoroacetate/CTA, silver nanowires (AgNWs) with an average diameter of about 695 nm and low resistivity of 5.7 µΩ cm had also formed after one calcination step under ambient (350 °C, 20 min) . It should be noted that the addition of a small amount of CTA is quite essential to maintain the continuous structure of AgNW, because the formed CuO in the composite nanowires that has a high melting temperature ( T m ≈ 1326 °C) hinders the Ag agglomerated in the high temperature .…”
Section: Applications Via Ehd Direct‐writingmentioning
confidence: 99%
“…d) Transmittance (at 550 nm) versus sheet resistance of AgNW arrays with other related transparent electrodes. Reproduced with permission . Copyright 2016, Wiley‐VCH.…”
Section: Applications Via Ehd Direct‐writingmentioning
confidence: 99%
“…[1][2][3][4][5][6][7] Ultrafine metal fibers are one of the key components used to prepare flexible electronics devices fulfilling the above characteristics, [8][9][10][11] and they have been extensively studied in a variety of fields, such as smart windows, 12 touch screen, [13][14][15] nanocircuits, [16][17][18] artificial electronic skin, 19-24 solar cells, 25 and interactive electronics. 26 In the context of these applications, how to use the ultrafine metal fibers on flexible substrate is a pivotal problem.…”
Section: Introductionmentioning
confidence: 99%
“…By shortening the nozzle-to-collector distance, near-field electrospinning (NFES) can avoid the whipping instability and realize the direct-writing of straight micro/nano fibers [18]. This controllable manner has greatly expanded the applications of electrospinning, i.e., transparent electrodes [19], piezoelectric devices [20], non-volatile memories [21] and field-effect transistors [22]. However, the straight fiber based structures enable devices to be bendable but not stretchable.…”
Section: Introductionmentioning
confidence: 99%