Versatile Electrochemical Plating Process Development for Heterogeneous WLP Structures

Han, Jianwen; Braye, Stephan; Ye, Pingping; Shaffer, David W.; Whitten, Kyle; Richardson, Thomas J.; Najjar, Elie

doi:10.1109/ectc32862.2020.00066

Cited by 2 publications

(4 citation statements)

References 10 publications

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“…We formulated Gen1 nt-Cu with a single additive in an acidic makeup solution with expansive operating windows, including concentration, agitation, and current density [16,17]. Fig.…”

Section: A Gen 1 Nanotwinned Cumentioning

confidence: 99%

Section: B Comparison Of Gen 1 and Gen 2 Nanotwinned Cumentioning

confidence: 99%

See 1 more Smart Citation

Transforming WLP Applications: Introducing Cutting-Edge Next-Generation Nanotwinned Copper Processes to Revolutionize Hybrid Bonding

Ye,

Han,

Braye

et al. 2024

Journal of Microelectronics and Electronic Packaging

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We discuss two electrochemical plating approaches for nanotwinned copper (ECP nt-Cu)—Gen 1 and Gen 2. These two approaches allow control over columnar width and transition layer thickness on Cu substrates, enabling the filling of nanotwinned Cu for bonding applications. Both approaches produce stable nt-Cu structures with minimal transition layers when electroplated on (111) Cu substrate. However, grain size, transition layer thickness on polycrystalline substrates, and feature-filling behavior differ. The researchers suggest that the choice between Gen 1 and Gen 2 depends on the feature size, aspect ratio, and applications. In addition, further exploration into other additives improves bottom-up filling capabilities, enabling more versatility for applications. Both approaches enable the filling of nanotwinned Cu inside bottom-seeded and complete-seeded features, with 100% nanotwin growth parallel to the substrate for bottomseeded features. However, nanotwin growth percentage and direction depend on feature size and aspect ratio for complete-seeded features. Gen 2 tends to have less sidewall growth due to its smaller grain size and is more compatible with other additives, making it promising for high aspect ratio small features.

show abstract

“…We formulated Gen1 nt-Cu with a single additive in an acidic makeup solution with expansive operating windows, including concentration, agitation, and current density [16,17]. Fig.…”

Section: A Gen 1 Nanotwinned Cumentioning

confidence: 99%

Section: B Comparison Of Gen 1 and Gen 2 Nanotwinned Cumentioning

confidence: 99%

Transforming WLP Applications: Introducing Cutting-Edge Next-Generation Nanotwinned Copper Processes to Revolutionize Hybrid Bonding

Ye,

Han,

Braye

et al. 2024

Journal of Microelectronics and Electronic Packaging

View full text Add to dashboard Cite

show abstract

“…We formulated Gen1 nt-Cu with a single additive in an acidic makeup solution with expansive operating windows, including concentration, agitation, and current density [11,12]. Fig.…”

Section: A Gen 1 Nanotwinned Cumentioning

confidence: 99%

“…This Gen 1 nt-Cu can fill different WLP bottom-seeded features, such as pad, pillar, and RDL line. By incorporating a secondary additive, Gen 1 nt-cu can even fill the via with tapered recess, resulting in a high percentage of nt-Cu parallel to the bottom seed of a flat surface [12]. However, for features with the completed seed, such as the damascene structure, there is an intense competition between the sidewall direction growth and bottom-up direction growth, as shown schematically in Fig 4 . Therefore, the conformal plating alone process cannot meet the requirement for a high percentage of nt-Cu growing from the bottom when the feature diameter is smaller than 2-3 µm and the aspect ratio is more significant than 1.…”

Section: B Comparison Of Gen 1 and Gen 2 Nanotwinned Cumentioning

confidence: 99%

Transforming WLP Applications: Introducing Cutting-Edge Next-Generation Nanotwinned Copper Processes to Revolutionize Hybrid Bonding

Ye,

Han,

Braye

et al. 2024

IMAPSource Proceedings

View full text Add to dashboard Cite

We discuss two electrochemical plating approaches for nanotwinned copper (ECP nt-Cu) - Gen 1 and Gen 2. These two approaches allow control over columnar width and transition layer thickness on Cu substrates, enabling the filling of nanotwinned Cu for bonding applications. Both approaches produce stable nt-Cu structures with minimal transition layers when electroplated on (111) Cu substrate. However, grain size, transition layer thickness on polycrystalline substrates and feature-filling behavior differ. The researchers suggest that the choice between Gen 1 and Gen 2 depends on the feature size, aspect ratio and applications. In addition, further exploration into other additives may improve bottom-up filling capabilities, enabling more versatility for applications. Both approaches enable the filling of nanotwinned Cu inside bottom-seeded and complete-seeded features, with 100% nanotwin growth parallel to the substrate for bottom-seeded features. However, nanotwin growth percentage and direction depend on feature aspect ratio and size for complete-seeded features. Gen 2 tends to have less sidewall growth due to its smaller grain size and is more compatible with other additivies, making it promising for high aspect ratio small features.

show abstract

Versatile Electrochemical Plating Process Development for Heterogeneous WLP Structures

Cited by 2 publications

References 10 publications

Transforming WLP Applications: Introducing Cutting-Edge Next-Generation Nanotwinned Copper Processes to Revolutionize Hybrid Bonding

Transforming WLP Applications: Introducing Cutting-Edge Next-Generation Nanotwinned Copper Processes to Revolutionize Hybrid Bonding

Transforming WLP Applications: Introducing Cutting-Edge Next-Generation Nanotwinned Copper Processes to Revolutionize Hybrid Bonding

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