Verification of on-wafer noise parameter measurements

Noise temperature measurements on wafer

“…As mentioned above, we could choose to shift units around so that, for example, a a , b a , and c* were all dimensionless and e a had dimensions V/m, but for present purposes we shall use eqs (9) and (10). The remaining practical question is what is the physical significance or interpretation of f a , and how does one determine or measure it?…”

“…Alternatively, if there is a single input impedance of interest, for example, 50 ft, then the noise figure can be measured at just that one impedance. A good deal of work has been done over the past several years to develop and improve techniques for measurement of noise figure on wafer [1][2][3][4][5][6][7][8][9][10][11]. Methods and even commercial systems exist for such measurements.…”

An Analytical Approach on the Determination of Generator Reflection Coefficients Used in the Noise-Parameter Measurement

“…Moreover, when measurement uncertainty, or error, is taken into account, simulation shows that this Γ g circle is preferred having a large radius if the uncertainty is embedded in the measured T n , which is usually the case when measuring an ultra-sensitive transistor. Though it is convenient using the simulation approach to both determine the desired generator reflection coefficients and make an evaluation of different computation algorithms [20]- [23], this empirical approach cannot reveal much about the underlying physics, nor explains why the desired results can be rendered. In this paper, we intend to demonstrate that, through mathematical reasonings, several interesting conclusions can indeed be obtained without the running of numerous and laborious simulations.…”