VCSELs with a self-aligned contact and copper-plated heatsink

Al-Omari, A. N.; Lear, K.L.

doi:10.1109/lpt.2005.851938

Cited by 54 publications

(36 citation statements)

References 14 publications

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“…Finally, temperature dependence of the thermal impedance, R th (T ), is estimated by measuring the change in the emission wavelength, and therefore the increase in the device temperature, with increasing dissipated power in the current range I b < 2I th at different ambient temperatures [11,20]. This is done so that temperature increase due to bias-current induced self-heating is negligible.…”

Section: Extraction Of Parameters From Measurementsmentioning

confidence: 99%

“…To delay the onset of thermal rollover, the rate of increase of T with respect to I b must be reduced. Traditionally, this has been achieved by reducing series resistance R s [3,12,14] and R th [11,20]. In this work, however, we focus on identifying and quantifying the relative contributions to linear power dissipation (P LPD ) in our device with an aim to formulate design strategies to reduce them.…”

Section: Predictions From the Thermal Modelmentioning

confidence: 99%

“…The phenomena responsible for self-heating have received a great deal of attention, both experimentally [11][12][13][14][15] and theoretically [15][16][17][18][19][20][21]. Experimental studies on improving the thermally-limited dynamic performance have focused on reducing resistance [3,12,14], internal optical absorption [10] and thermal impedance [11]. Theoretical modeling of self-heating effects is a complex problem and involves taking into account various optical, electrical and thermal interactions for the specific VCSEL design under consideration [16,20,21].…”

Section: Introductionmentioning

confidence: 99%

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Assessment of VCSEL thermal rollover mechanisms from measurements and empirical modeling

et al. 2011

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Abstract:We use an empirical model together with experimental measurements for studying mechanisms contributing to thermal rollover in vertical-cavity surface-emitting lasers (VCSELs). The model is based on extraction of the temperature dependence of threshold current, internal quantum efficiency, internal optical loss, series resistance and thermal impedance from measurements of output power, voltage and lasing wavelength as a function of bias current over an ambient temperature range of 15-100 • C. We apply the model to an oxide-confined, 850-nm VCSEL, fabricated with a 9-μm inner-aperture diameter and optimized for highspeed operation, and show for this specific device that power dissipation due to linear power dissipation (sum total of optical absorption, carrier thermalization, carrier leakage and spontaneous carrier recombination) exceeds power dissipation across the series resistance (quadratic power dissipation) at any ambient temperature and bias current. We further show that the dominant contributors to self-heating for this particular VCSEL are quadratic power dissipation, internal optical loss, and carrier leakage. A rapid reduction of the internal quantum efficiency at high bias currents (resulting in high temperatures) is identified as being the major cause of thermal rollover. Our method is applicable to any VCSEL and is useful for identifying the mechanisms limiting the thermal performance of the device and to formulate design strategies to ameliorate them. Vertical-Cavity Surface-Emitting Lasers: Design, Fabrication, Characterization, and Applications, (Cambridge Univ. Press, 1999). 23. C. J. Chang-Hasnain, C. E. Zah, G. Hasnain, J. P. Harbison, L. T. Florez, N. G. Stoffel, and T. P. Lee, "Effect of operating electric power on the dynamic behavior of quantum well vertical-cavity surface-emitting lasers," Appl.

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Section: Extraction Of Parameters From Measurementsmentioning

confidence: 99%

Section: Predictions From the Thermal Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Assessment of VCSEL thermal rollover mechanisms from measurements and empirical modeling

et al. 2011

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“…The performance of the HC-VCSELs in terms of output power and speed is limited by the high thermal impedance caused by the high thermal resistance of the dielectric DBR. Integrated metallic heat spreaders [14] or thermal shunts [15] may reduce the thermal impedance.…”

Section: Summary and Discussionmentioning

confidence: 99%

Hybrid vertical-cavity laser integration on silicon

et al. 2017

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The hybrid vertical-cavity laser is a potential low current, high-efficiency, and small footprint light source for silicon photonics integration. As part of the development of such light sources we demonstrate hybrid-cavity VCSELs (HC-VCSELs) on silicon where a GaAs-based half-VCSEL is attached to a dielectric distributed Bragg reflector on silicon by adhesive bonding. HC-VCSELs at 850 nm with sub-mA threshold current, >2 mW output power, and 25 Gbit/s modulation speed are demonstrated. Integration of short-wavelength lasers will enable fully integrated photonic circuits on a silicon-nitride waveguide platform on silicon for applications in life science, bio-photonics, and short-reach optical interconnects.

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“…The development of a self-aligned process is of great interest as already demonstrated for the fabrication of high performance HBT transistors or ridge lasers [3,4]. To that extent, Al-Omari [5] used a top metallic contact deposited over a photoresist layer as a hard mask to dry-etch the VCSEL mesa. Chua [6] developed a pseudo-planar approach by opening via holes down to the AlAs layer to carry out the lateral oxidation.…”

Section: Introductionmentioning

confidence: 99%

Oxide-confined VCSELs fabricated with a simple self-aligned process flow

Marigo-Lombart¹,

Calvez²,

Arnoult³

et al. 2017

Semicond. Sci. Technol.

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To cite this version:Ludovic Marigo-Lombart, Stéphane Calvez, Alexandre Arnoult, Hugo Thienpont, Krassimir Panajotov, et al.. Oxide-confined VCSELs fabricated with a simple self-aligned process flow. Semiconductor Science and Technology, IOP Publishing, 2017, 32 (12) Abstract :. We propose a simplified and easier fabrication process flow for the manufacturing of AlOx-confined VCSELs based on combining the oxidation step with a self-aligned process, allowing the mesa etching and two successive lift-off steps based on a single lithography step. The electro-optical confinement achieved by standard lateral oxidation enables a low threshold and a single mode behaviour for the VCSEL. This simplified process can largely improve VCSEL manufacturing by reducing the processing time and costs compared to the standard VCSEL process.Keywords : VCSEL, Self-aligned, oxidation Introduction:Vertical-cavity surface-emitting lasers (VCSEL) have become the preferred light sources in many photonic systems, enabling short-link interconnections [1] but also in other emerging mass-market applications like sensing and detection [2]. The large production volume of VCSELs would benefit from a simplification of the manufacturing process flow that may largely increase the cost-effectiveness. Indeed, compared to the LED and LDs, the VCSEL fabrication process flow requires a large number of elementary steps defined by successive inter-aligned photolithography levels. A precision in the micron range is required to ensure the lateral alignment between the optical waveguide and the electrical injection. For these reasons, one of the most important concerns for the VCSEL manufacturers is to improve the production throughput by lowering the fabrication time and cost per wafer. The development of a self-aligned process is of great interest as already demonstrated for the fabrication of high performance HBT transistors or ridge lasers [3,4]. To that extent, Al-Omari [5] used a top metallic contact deposited over a photoresist layer as a hard mask to dry-etch the VCSEL mesa. Chua [6] developed a pseudo-planar approach by opening via holes down to the AlAs layer to carry out the lateral oxidation. This process has subsequently been improved by Strzelecka [7] to increase the device density. Recently, we have shown that air-post VCSELs could be created using an innovative selfaligned process, which combined several masking and lift-off steps defined by a single lithographic step [8].In this paper, we extend this work and propose a new process flow to fabricate, in a very simple and straightforward way, the widely-used oxide-confined VCSELs. The demonstrated process drastically simplifies the oxide-confined VCSEL fabrication by reducing the total number of lithographic alignment steps from four or more to only one alignment, with the additional advantage of relieving the required tolerances. This process flow, most suitable for 3D imaging and sensing applications, can also be easily implemented for the fabrication of other optoelectronic devices such as...

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VCSELs with a self-aligned contact and copper-plated heatsink

Cited by 54 publications

References 14 publications

Assessment of VCSEL thermal rollover mechanisms from measurements and empirical modeling

Assessment of VCSEL thermal rollover mechanisms from measurements and empirical modeling

Hybrid vertical-cavity laser integration on silicon

Oxide-confined VCSELs fabricated with a simple self-aligned process flow

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