VCSEL noise characterization for data rates beyond 25 Gb/s

Murty, M. V. R. K.; Wang, Jingyi; Cheng, An-Nien; Harren, Ann Lehman; Feng, Zheng-Wen; Chu, Jason; Giovane, Laura M.

doi:10.1117/12.2290955

Cited by 4 publications

(3 citation statements)

References 5 publications

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“…The 940nm 100Gb/s VCSELs have the same structure as the Broadcom 100Gb/s 850nm VCSELs as described in [1,7], which is a top-emitting structure consisting of InGaAs multiple quantum wells sandwiched by top P-DBR and bottom N-DBR on a GaAs substrate. The epitaxial layers are grown in large-scale metal-organic chemical vapor deposition (MOCVD) reactor.…”

Section: Device Design and Fabricationmentioning

confidence: 99%

“…To demonstrate the large-signal performance of the 940nm VCSEL, eye diagrams are taken after a 2m OM4 multimode fiber (MMF) with the same setup as described in [7]. The VCSEL, which is operating at a temperature of 75°C and a bias of 9mA, is modulated with the PAM-4 format at a symbol rate of 53.125Gbaud with the PRBS15Q pattern.…”

Section: Large-signal Modulationmentioning

confidence: 99%

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Development and characterization of 100Gb/s 940nm VCSELs for multimode optical links

Jiang,

Wang,

Murty

et al. 2024

Vertical-Cavity Surface-Emitting Lasers XXVIII

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The market for 100Gb/s per lane multimode (MM) vertical-cavity surface-emitting lasers (VCSELs) continues to be driven by the growing demand from data centers, cloud storage, and enterprise networks. Low cost and energy efficient VCSELbased multimode links are especially suited for the high speed interconnections (HSI) that facilitate generative artificial intelligence (AI). The VCSEL technologies are largely shaped by the Fibre-channel and the Ethernet standards, and more recently by the Terabit Bidi MSA and InfiniBand requirements. In this paper, we present the development and performance of a 940nm multimode VCSEL with 3-dB small-signal modulation bandwidth exceeding 25GHz over temperature and relative intensity noise (RIN) below -145dB/Hz, suitable for 100Gb/s per lane data transmission. The VCSEL's 940nm center wavelength is within the wavelength range directed by IEEE 802.3 VR4 and offers the advantages of higher differential gain and lower thermal impedance. Large-signal performance at 100 Gb/s as well as device reliability will also be presented.

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Section: Device Design and Fabricationmentioning

confidence: 99%

Section: Large-signal Modulationmentioning

confidence: 99%

Development and characterization of 100Gb/s 940nm VCSELs for multimode optical links

Jiang,

Wang,

Murty

et al. 2024

Vertical-Cavity Surface-Emitting Lasers XXVIII

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“…The small change in noise after fiber transmission indicates small mode partition coefficients. 9 The three components of noise -RIN, MPN, and modal noise are thus sufficiently small for establishing 100G links.…”

Section: Device Characteristicsmentioning

confidence: 99%

100G VCSELs for bidirectional multi-mode links

Murty

Wang

Dolfi

et al. 2023

Vertical-Cavity Surface-Emitting Lasers XXVII

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The entry of 100G 850 nm VCSELs enables the replacement of copper by multimode fiber in switch-toserver links, and facilitates the upgrade of switch-to-switch links in enterprise networks and data centers. This paper will present the key features and characteristics of multimode VCSELs that enable direct modulation at 100 Gb/s suitable for multimode Ethernet and Fibre Channel standards. Beyond 100G, a bidirectional link using VCSELs of two wavelengths is one potential solution to double the aggregate data rate on duplex fiber links. Elements of both 850 and 910 nm VCSELs that would enable the next generation data links are described.

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