“…In more recent work, strained InGaAs QWs were adopted because of their larger differential gain, compared to unstrained GaAs QWs. Many groups have realized up to an approximate 30 GHz modulation bandwidth of 850 nm VCSELs, by using strained InGaAs QWs, in combination with graded interfaces and modulation doped DBRs, multiple oxide apertures, a short cavity, and photon lifetime tuning [29,39,40]. Under both NRZ-OOK (PAM 2) and PAM 4 modulation, the bit rates for short distances have been increased beyond 50 Gb/s or 100 Gb/s, respectively.…”