Various structures of 1200V SiC MPS diode models and their simulated surge current behavior in comparison to measurement

Palanisamy, Shanmuganathan; Fichtner, Susanne; Lutz, Josef; Basler, Thomas; Rupp, Roland

doi:10.1109/ispsd.2016.7520821

Cited by 27 publications

(14 citation statements)

References 7 publications

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“…It was noticed that Device 1 has the thinnest substrate and the smallest chip size. It also has additional large P+ regions placed periodically in the active region, which is reported to be able to improve the device’s high current conduction performance [ 27 , 35 ].…”

Section: Methodsmentioning

confidence: 99%

“…Moreover, since the junction temperature is a critical variable in the surge process, a good knowledge of it is necessary to investigate device surge capabilities. Unfortunately, the junction temperature is not a directly measurable physical quantity, and usually indirect measurement and simulation should be used [ 10 , 27 , 28 , 29 ]. Considering that the surge current phenomenon is a complicated electro-thermal coupled process, such simulations often tend to be extremely time- consuming.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations

Ren

Guo

et al. 2020

Materials

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A comparative study of surge current reliability of 1200 V/5 A 4H-SiC (silicon carbide) MPS (Merged PiN Schottky) diodes with different technologies is presented. The influences of device designs in terms of electrical and thermal aspects on the forward conduction performance and surge current capability were studied. Device forward characteristics were simulated and measured. Standard single-pulse surge current tests and thermal impedance measurements were carried to show their surge capability and thermal design differences. An advanced thermal RC (thermal resistance-capacitance) model, with the consideration of current distribution non-uniformity effects, is proposed to accurately calculate the device junction temperature during surge events. It was found that a thinner substrate and a hexagonal layout design are beneficial to the improvement of the bipolar conduction performance in high current mode, as well as the surge current capability. The thinner substrate design also has advantages on thermal aspects, as it presents the lowest thermal resistance. The calculated failure temperature during the surge tests is consistent with the aluminum melting phenomenon, which is regarded as the failure mechanism. It was demonstrated that, for a SiC MPS diode, higher bipolar conduction performance is conducive to restraining the joule heat, and a lower thermal resistance design is able to accelerate the heat dissipation and limit the junction temperature during surge events. In this way, the MPS diode using a thinner substrate and advanced layout design technology is able to achieve 60% higher surge current density capability compared to the other technologies.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations

Ren

Guo

et al. 2020

Materials

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“…Therefore, the Mo-based Schottky metal work function is defined − = 4.53 [49], which results in a SBH value for electrons similar to measured ones [58]. The blocking voltage layer is 11μm thick and of 1.2x10 16 cm -3 nitrogen (N) doping density [59]. The substrate thickness was defined 110μm which corresponds to Infineon's thinQ!…”

Section: H-sic Epimentioning

confidence: 99%

“…The active area of the device was calculated to be 0.029 cm 2 . The calculation makes use of the Current density -Voltage measurements (J-V) of a similar 1.2kV power diode with 10A rated available in [59], which in turn can be correlated with information from [60] and our own measurements. It also assumes a honeycomb layout design [61].…”

Section: H-sic Epimentioning

confidence: 99%

On the Suitability of 3C-Silicon Carbide as an Alternative to 4H-Silicon Carbide for Power Diodes

Arvanitopoulos

Antoniou

Perkins

et al. 2019

IEEE Trans. on Ind. Applicat.

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Major recent developments in growth expertise related to the cubic polytype of Silicon Carbide, the 3C-SiC, coupled with its remarkable physical properties and the low fabrication cost, suggest that within the next years, 3C-SiC devices can become a commercial reality. Inevitably, a comparison to the most well developed polytype of SiC, the 4H-SiC, should exist. It is therefore important to develop Finite Element Method (FEM) techniques and models for accurate device design, analysis and comparison. It is also needed to perform an exhaustive investigation with scope to identify which family of devices, which voltage class and for which applications this polytype is best suited. In this work, we validate the recently developed Technology Computer Aided Design (TCAD) material models for 3C-SiC and those of 4H-SiC with measurements on power diodes. An excellent agreement between measurements and TCAD simulations was obtained. Thereafter, based on this validation, 3C-and 4H-SiC vertical power diodes are assessed, to create trade-off maps. Depending on the operation requirements imposed by the application, the developed trade-off maps set the boundary of the realm for those two polytypes and allows to predict which applications would benefit once electrically graded 3C-SiC becomes available.

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“…The MPS concept was implemented and investigated for SiC-based devices [32][33][34][35][36][37][38]; however, there have been only a few reports about GaN-based MPS [39][40][41]. The early MPS work used a Si+ ion implantation technique to form n-type regions inside p-epi layers on free-standing GaN substrates, and the MPS appeared to be a smooth surface [40].…”

Section: Introductionmentioning

confidence: 99%

Device Design Assessment of GaN Merged P-i-N Schottky Diodes

2019

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Device characteristics of GaN merged P-i-N Schottky (MPS) diodes were evaluated and studied via two-dimensional technology computer-aided design (TCAD) after calibrating model parameters and critical electrical fields with experimental proven results. The device’s physical dimensions and drift layer concentration were varied to study their influence on the device’s performance. Extending the inter-p-GaN region distance or the Schottky contact portion could enhance the forward conduction capability; however, this leads to compromised electrical field screening effects from neighboring PN junctions, as well as reduced breakdown voltage. By reducing the drift layer background concentration, a higher breakdown voltage was expected for MPSs, as a larger portion of the drift layer itself could be depleted for sustaining vertical reverse voltage. However, lowering the drift layer concentration would also result in a reduction in forward conduction capability. The method and results of this study provide a guideline for designing MPS diodes with target blocking voltage and forward conduction at a low bias.

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Various structures of 1200V SiC MPS diode models and their simulated surge current behavior in comparison to measurement

Cited by 27 publications

References 7 publications

A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations

A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations

On the Suitability of 3C-Silicon Carbide as an Alternative to 4H-Silicon Carbide for Power Diodes

Device Design Assessment of GaN Merged P-i-N Schottky Diodes

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