Variations of the parameters of PbSe nanolayers with change of their technology

Pashaev, A. M.; Davarashvili, O. I.; Enukashvili, Megi I.; Akhvlediani, Z. G.; Gulyaev, Revaz G.; Dzagania, M. A.

doi:10.1088/1757-899x/77/1/012017

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“…At the same time, at a certain growth rate, the minimal thickness of the layer for the maximum lattice constant can somewhat change with an increase in the density of dislocations in the substrate up to more than 10 6 cm -2 . 16,17 It is noteworthy that the increase in the tangential lattice constant is associated with tensile strain in the layers, and not with the difference between thermal expansion coefficients of the KCl and the PbSe layers, when, on the contrary, the lattice constant of layers decreases. The increase in the lattice constant of layers is connected with the deformations formed at the substrate-layer interface, and not at the boundaries of subgrainsin this case, disorientation is minimal and makes up one hundred-thousandth of a minute.…”

Section: Resultsmentioning

confidence: 99%

High Deformations in Lead Selenide Nanolayers and Related New Properties

Pashaev

Davarashvili²,

Enukashvili³

et al. 2019

ECB

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The article deals with the modified method of "hot-wall" beam epitaxy for obtaining the strained lead selenide nanolayers over a wide range of growth rates and controlling their thickness. With detection of the two-stage growth of the layers, the layers with high deformationstangential lattice constants, and hence with high "negative" pressure were formed. Observations of the shift of the optical spectrum in strained layers and the possibility of deep compensation of the concentration of current carriers when doping the layers with impurities with variable valence turned out to be interesting as well. Under high deformations, the texture of a tetragonal phase is formed. There appears a new level in the conduction band and hence additional absorption in the optical spectrum. The given specific features were first discovered in the physics and technology of IV-VI semiconductors, and they open new opportunities of using these semiconductors in IR optoelectronics.

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Section: Resultsmentioning

confidence: 99%