Variations of solid–liquid interface in the BGO low thermal gradients Cz growth for diffuse and specular crystal side surface

Yuferev, V. S.; Budenkova, O.; Vasiliev, M.G.; Rukolaine, Sergey A.; Shlegel, V.N.; Vasiliev, Ya. V.; Zhmakin, Alexander I.

doi:10.1016/s0022-0248(03)01110-2

Cited by 51 publications

(55 citation statements)

References 20 publications

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“…The seed-melt interface is deflected upwards by the changes of fluid motion which modify the thermal gradient and heat transfer mode in the melt and gas close to the seedmelt interface. This trend agrees with the numerical [1][2][3][4][5] and experimental [6][7][8][9] findings for the interface shape inversion with the increase of the crystal rotation rate. ) as a function of the seed rotation rate (ω seed ) for both configurations, resulting from our simulations.…”

Section: Resultssupporting

confidence: 91%

Numerical investigation of heat transport and fluid flow during the seeding process of oxide Czochralski crystal growth Part 2: rotating seed

Tavakoli

Wilke

2007

Cryst. Res. Technol.

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In this paper, the role of seed rotation on the characteristics of the two-dimensional temperature and flow field in the oxide Czochralski crystal growth system has been studied numerically for the seeding process. Based on the finite element method, a set of two-dimensional quasi-steady state numerical simulations were carried out to analyze the seed-melt interface shape and heat transfer mechanism in a Czochralski furnace with different seed rotation rates: ω seed = 5-30 rpm. The results presented here demonstrate the important role played by the seed rotation for influencing the shape of the seed-melt interface during the seeding process. The seed-melt interface shape is quite sensitive to the convective heat transfer in the melt and gaseous domain. When the local flow close to the seed-melt interface is formed mainly due to the natural convection and the Marangoni effect, the interface becomes convex towards the melt. When the local flow under the seed-melt interface is of forced convection flow type (seed rotation), the interface becomes more concave towards the melt as the seed rotation rate (ω seed ) is increased. A linear variation of the interface deflection with respect to the seed rotation rate has been found, too.

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Section: Resultssupporting

confidence: 91%

Numerical investigation of heat transport and fluid flow during the seeding process of oxide Czochralski crystal growth Part 2: rotating seed

Tavakoli

Wilke

2007

Cryst. Res. Technol.

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“…Later, Kobayashi et al investigated the effect of different absorption coefficients on the thermal stress in the Czochralski growth of a LiNbO 3 crystal [15]. Budenkova et al applied the discrete ordinate method [16] to compute the interface shape including facet formation [17]. For simplicity, they only consider a central facet of the Bi 12 GeO 20 (BGO) crystal.…”

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confidence: 99%

Numerical Modelling of the Czochralski Growth of β-Ga2O3

et al. 2017

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Our numerical modelling of the Czochralski growth of single crystalline β-Ga 2 O 3 crystals (monoclinic symmetry) starts at the 2D heat transport analysis within the crystal growth furnace, proceeds with the 3D heat transport and fluid flow analysis in the crystal-melt-crucible arrangement and targets the 3D thermal stress analysis within the β-Ga 2 O 3 crystal. In order to perform the stress analysis, we measured the thermal expansion coefficients and the elastic stiffness coefficients in two samples of a β-Ga 2 O 3 crystal grown at IKZ. Additionally, we analyse published data of β-Ga 2 O 3 material properties and use data from literature for comparative calculations. The computations were performed by the software packages CrysMAS, CGsim, Ansys-cfx and comsol Multiphysics. By the hand of two different thermal expansion data sets and two different crystal orientations, we analyse the elastic stresses in terms of the von-Mises stress.

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“…One has to account for the spectrally dependent absorption in the crystal, the specular re°ection from the surfaces and di®erent values of the refraction index. Peculiarities of the radiation propagation can signi¯canly change the shape of the melt/crystal interface in semi-transparent oxides [65]. Thus ad-vanced models, such as characteristics method [50] or extension of Ray Tracing method [37] to multi-band radiative heat transfer [31], are needed.…”

Section: Radiative Heat Transfermentioning

confidence: 99%

Industrial challenges for numerical simulation of crystal growth

Богданов¹,

Ofengeim²,

Zhmakin³

2004

Open Physics

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Abstract:Numerical simulation of industrial crystal growth is di¯cult due to its multidisciplinary nature and the complex geometry of the real-life growth equipment. An attempt is made to itemize physical phenomena dominant in the di¬erent methods for growth of bulk crystals from the melt and the vapor phase as well as to review corresponding numerical approaches. Academic research and industrial applications are compared. Development of a computational engine and a graphic user interface of the industry-oriented codes is discussed. A simulator for the entire growth process of bulk crystals by sublimation method is described.

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Variations of solid–liquid interface in the BGO low thermal gradients Cz growth for diffuse and specular crystal side surface

Cited by 51 publications

References 20 publications

Numerical investigation of heat transport and fluid flow during the seeding process of oxide Czochralski crystal growth Part 2: rotating seed

Numerical investigation of heat transport and fluid flow during the seeding process of oxide Czochralski crystal growth Part 2: rotating seed

Numerical Modelling of the Czochralski Growth of β-Ga2O3

Industrial challenges for numerical simulation of crystal growth

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