Variations in the Raman peak shift as a function of hydrostatic pressure for various carbon nanostructures: A simple geometric effect

Sandler, Jan K.W.; Shaffer, Milo S. P.; Windle, Alan H.; Halsall, Matthew P.; Montes-Morán, Miguel A.; Cooper, C. A.; Young, Robert J.

doi:10.1103/physrevb.67.035417

Cited by 139 publications

(107 citation statements)

References 45 publications

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“…However, their data imply ␥ E 2g ϳ 2.87, in disagreement with both our measurements and with all graphite literature. [41][42][43][44] We also note that our results disagree with recent Raman experiments on uniaxial strain in graphene, 20,24 which report much smaller ‫ץ‬ / ‫ץ‬ , implying much smaller Grüneisen parameter. It is difficult to see how the Grüneisen parameter of graphene should be much smaller than that measured in plane for graphite.…”

Section: ͑6͒contrasting

confidence: 56%

“…To the best of our knowledge, no data exist in literature for uniaxial strain on graphite. However, several authors applied hydrostatic pressure on graphite [41][42][43] finding ‫ץ‬ G / ‫ץ‬ h ϳ 4.4-4.8 cm −1 / GPa, where h is the hydrostatic pressure ͑stress͒. The in-plane biaxial strain under hydrostatic pressure is ⑀ = ͑S ll + S lt ͒ h .…”

Section: ͑6͒mentioning

confidence: 99%

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Uniaxial strain in graphene by Raman spectroscopy:Gpeak splitting, Grüneisen parameters, and sample orientation

et al. 2009

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We uncover the constitutive relation of graphene and probe the physics of its optical phonons by studying its Raman spectrum as a function of uniaxial strain. We find that the doubly degenerate E 2g optical mode splits in two components: one polarized along the strain and the other perpendicular. This splits the G peak into two bands, which we call G + and G − , by analogy with the effect of curvature on the nanotube G peak. Both peaks redshift with increasing strain and their splitting increases, in excellent agreement with first-principles calculations. Their relative intensities are found to depend on light polarization, which provides a useful tool to probe the graphene crystallographic orientation with respect to the strain. The 2D and 2DЈ bands also redshift but do not split for small strains. We study the Grüneisen parameters for the phonons responsible for the G, D, and DЈ peaks. These can be used to measure the amount of uniaxial or biaxial strain, providing a fundamental tool for nanoelectronics, where strain monitoring is of paramount importance

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Section: ͑6͒contrasting

confidence: 56%

Section: ͑6͒mentioning

confidence: 99%

Uniaxial strain in graphene by Raman spectroscopy:Gpeak splitting, Grüneisen parameters, and sample orientation

et al. 2009

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“…5 The mean internal radius is 0.7 nm and the mean external radius is 1.04 nm for the sample used here. Using the elastic constants of graphite 12,29 and considering the elastic continuum model for DWCNTs we find a pressure coefficient for the internal ͑ex-ternal͒ tube of −0.8p͑−1.7p͒, which corresponds to 3.8 cm −1 / GPa ͑8.1 cm −1 / GPa͒. The pressure coefficients we observe for argon are close to these values and are within the same order of magnitude for the pressure media considered here.…”

supporting

confidence: 63%

“…10,11 The methanol-ethanol medium is used in several high pressure studies on CNTs. 6,[12][13][14][15][16][17] Argon gas adsorption studies on CNTs 18 identified several adsorption sites: interstitial channels, external groove sites, and the external surface. Pseudohexagonal medium range ordering of adsorbents have been predicted on the external surface of CNTs.…”

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confidence: 99%

Nanoscale pressure effects in individual double-wall carbon nanotubes

et al. 2006

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“…28,29 For electronirradiated SWNTs, a frequency upshift was observed in the GЈ band, indicating a compressive strain in the lattice upon irradiation but no such upshift was observed for C ion implantation. 8 The GЈ band for 4 MeV Ne-bombarded SWNTs did not show an upshift indicating that the amount of strain transferred to the lattice was quite small.…”

Section: Dwnts Vs Swntsmentioning

confidence: 94%

Resonance Raman spectroscopy in Si and C ion-implanted double-wall carbon nanotubes

et al. 2009

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The effect of 170 keV Si and 100 keV C ion bombardment on the structure and properties of highly pure, double-wall carbon nanotubes has been investigated using resonance Raman spectroscopy. The implantations were performed at room temperature with ion doses ranging between 1 ϫ 10 13 ions/ cm 2 and 1 ϫ 10 15 ions/ cm 2 . As expected, the Si irradiation created more disorder than the C irradiation for the same ion fluence. For both species, as the ion-implantation fluence increased, the D-band intensity increased, while the G-band intensity decreased, indicating increased lattice disorder, in analogous form to other forms of graphite and other nanotube types. The frequency of the G band decreased with increasing dose, reflecting a softening of the phonon mode due to lattice defects. With increasing ion fluence, the radial breathing modes ͑RBMs͒ of the outer tubes ͑either semiconducting or metallic͒ disappeared before the respective RBM bands from the inner tubes, suggesting that the outer nanotubes are more affected than the inner nanotubes by the ion irradiation. After Si ion bombardment to a dose of 1 ϫ 10 15 ions/ cm 2 , the Raman spectrum resembled that of highly disordered graphite, indicating that the lattice structures of the inner and outer nanotubes were almost completely destroyed. However, laser annealing partially restored the crystalline structure of the nanotubes, as evidenced by the re-emergence of the G and RBM bands and the significant attenuation of the D band in the Raman spectrum.

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Variations in the Raman peak shift as a function of hydrostatic pressure for various carbon nanostructures: A simple geometric effect

Cited by 139 publications

References 45 publications

Uniaxial strain in graphene by Raman spectroscopy:Gpeak splitting, Grüneisen parameters, and sample orientation

Uniaxial strain in graphene by Raman spectroscopy:Gpeak splitting, Grüneisen parameters, and sample orientation

Nanoscale pressure effects in individual double-wall carbon nanotubes

Resonance Raman spectroscopy in Si and C ion-implanted double-wall carbon nanotubes

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