Variations in photovoltaic parameters of CdTe/CdS thin film solar cells by changing the substrate for the deposition of CdS window layer

Sinha, Tarkeshwar; Verma, Lekha; Khare, Ayush

doi:10.1007/s00339-020-04058-4

Cited by 32 publications

(12 citation statements)

References 45 publications

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“…These cobalt selenide films have been prepared by using different methods including chemical bath deposition, electro deposition, magnetron sputtering method and mechano chemical method. The obtained thin films could be used in solar cell applications because of direct band gap between 1 to 2 eV 63,64 .…”

Section: Resultsmentioning

confidence: 99%

Effect of pH on the Synthesis of Cobalt Selenide Films by SILAR Method

Soonmin

2021

Orient. J. Chem

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The successive ionic layer adsorption and reaction method or called SILAR method was used to produce cobalt selenide thin films for the first time. The deposition was carried out onto the substrate under different various pH values. The X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and ultraviolet visible spectrophotometer were used to investigate the structure, morphology and optical properties of thin films, respectively. The XRD patterns confirmed that the presence of cubic phase cobalt selenide thin films. The grain size increased with increasing the pH value from pH 2 to pH 4 based on the FESEM images. The band gap values are in the range of 2 eV to 2.5 eV.

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Section: Resultsmentioning

confidence: 99%

Effect of pH on the Synthesis of Cobalt Selenide Films by SILAR Method

Soonmin

2021

Orient. J. Chem

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Section: Imentioning

confidence: 99%

The Influence of Bath Temperature on the Properties of SILAR Deposited Cobalt Selenide Thin Films

Soonmin

Anand

2021

Eng. Technol. Appl. Sci. Res.

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In this paper, cobalt selenide thin films have been deposited onto glass slides with the SILAR method under various bath temperatures. The structure, optical properties, and morphology of thin films were investigated. The X-ray diffraction patterns confirmed that the number of peak intensities increased with increasing bath temperature. From the AFM images, bigger sizes and thicker films were observed for the films prepared at 80°C. The average grain size was estimated to be 0.2µm, 0.15µm, and 0.25µm when the bath temperature was 40°C, 50°C, and 80°C respectively. The highest absorbance value was observed for films prepared at 80°C. The band gap values range from 2eV to 2.4eV.

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“…easy tunability of band gap, highly fluorescent nature, high carrier concentration, good transmission ability, and good chemical stability [1,2]. Among these compounds, the binary semiconductor compound Cadmium Telluride (CdTe) is extensively studied because of its high absorption coefficient ~ 10 5 cm -1 , high electron mobility, direct band gap energy in the range of ~ 1.4-1.5 eV, large Bohr exciton radius of 7.3 nm, and high work function [1,3,4]. Moreover, CdTe possesses different crystalline phases viz.…”

Section: Introductionmentioning

confidence: 99%

“…Upon heat treatment, the metastable hexagonal phase of CdTe transforms to its highly stable cubic phase [3,7]. Due to these fascinating properties, CdTe shows excellent photovoltaic characteristics and is used as a potential sensitizer in third generation solar cells [1,2,4].…”

Section: Introductionmentioning

confidence: 99%

An investigation on the structural and optical properties of MSA capped CdTe quantum dots

Borah

Saikia

Das

et al. 2023

Preprint

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In this work, a modified sonication induced wet chemical approach is adopted to synthesize highly luminescent and water soluble Cadmium Telluride (CdTe) quantum dots (QDs). Cadmium Chloride and Sodium Tellurite are used as the source of Cadmium and Tellurium. To limit the size of the QDs, Mercaptosuccinic acid is used as a capping agent. The refluxing time dependence on morphology, size, crystal structural, and optical properties of CdTe QDs are investigated. The refluxing time-dependent optical constants viz. band gap energy and Urbach energy of the QDs are estimated from UV-Vis absorption spectra. The fluorescence spectra of the QDs are also investigated by recording the spectra under the excitation wavelength at 320 nm. CdTe QDs are found to uniform in size. The average size of the QDs estimated from the HRTEM image analysis is about 5.8 nm and 8.2 nm for refluxing times 1 and 4 hours, respectively. The growth mechanism of the QDs as a function of refluxing time has also been discussed. Two phases of the CdTe QDs, namely hexagonal and cubic are confirmed from the HRTEM images and SAED patterns analysis. The phase transformation from hexagonal to cubic is successfully achieved by tuning the refluxing time from 1 to 4 hours.

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Variations in photovoltaic parameters of CdTe/CdS thin film solar cells by changing the substrate for the deposition of CdS window layer

Cited by 32 publications

References 45 publications

Effect of pH on the Synthesis of Cobalt Selenide Films by SILAR Method

Effect of pH on the Synthesis of Cobalt Selenide Films by SILAR Method

The Influence of Bath Temperature on the Properties of SILAR Deposited Cobalt Selenide Thin Films

An investigation on the structural and optical properties of MSA capped CdTe quantum dots

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