Variational results for electron mobility in modulation-doped In0.53Ga0.47As/InP single symmetric quantum wells

The effect of TiO2 nanotube morphological engineering and ZnS quantum dots on the water splitting reaction: A theoretical and experimental study

“…Moreover, such a strained heterostructure surface exhibits a chemical interface gradient spread over the surface [43]; it is known that the performance of surface devices is influenced by the quality of the interface [44]. In fact, interface crystalline imperfections such as planarity and composition gradients [45] cause scattering processes, leading to a reduction in the exciton decay time [46], a limitation in electron mobility [47] and an increase in non-radiative recombination [48]. As a result, superior photoelectrochemical activity was observed in this study for TiO 2 NT after constant voltage anodization, as this technique led to a smooth morphology for the water splitting reaction.…”

Transport Properties of A Quasi-two-dimensional Electron Gas in InP/In\(_{1 - x}\)Ga\(_{x}\)As/InP Quantum Wells : Correlation and Magnetic Field Effects

“…The transport properties of a quasi-two-dimensional electron gas (Q2DEG) in the lattice matched InP/In 0.53 Ga 0.47 As/InP quantum well (QW) have been studied by several authors [1][2][3][4][5]. It is an attractive system for high-speed electronic device applications due to the negligible concentration of DX centers and discolations on the InP donor layers [1].…”

“…It is an attractive system for high-speed electronic device applications due to the negligible concentration of DX centers and discolations on the InP donor layers [1]. Recently, we have studied the temperature effects on the mobility and resistivity of the unpolarized and fully polarized electron gas for interface-roughness, alloy disorder and impurity scattering [6].…”