Variation-tolerant ultra low-power heterojunction tunnel FET SRAM design

Saripalli, Vinay; Datta, Suman; Narayanan, Vijaykrishnan; Kulkarni, Jaydeep P.

doi:10.1109/nanoarch.2011.5941482

Cited by 119 publications

(80 citation statements)

References 19 publications

(29 reference statements)

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“…Both currentvoltage (I-V) and capacitance-voltage (C-V) characteristics were obtained from the TCAD Sentaurus device simulator by the NDCL group at PSU [6][7]12]. The Verilog-A model describes the behavior of a 40 nm double gate GaSb-InAs TFET device calibrated through full-band atomistic simulations with a dynamic non-local band-to-band tunneling model.…”

Section: Tfet-based Charge-pumpsmentioning

confidence: 99%

“…HE emerging Tunnel Field-Effect Transistor (TFET) has been considered an attractive alternative to replace conventional CMOS technologies in ultra-low power and energy efficient computing applications [1][2][3][4][5][6][7]. In contrast to thermionic devices, the high energy filtering of the band -toband tunneling (BTBT) carrier injection mechanism characterizes the TFET device with a sub-threshold slope (SS) below 60 mV/dec (at room temperature) and lower leakage current.…”

Section: Introductionmentioning

confidence: 99%

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Insights Into Tunnel FET-Based Charge Pumps and Rectifiers for Energy Harvesting Applications

Cavalheiro

Moll

Valtchev

2017

IEEE Trans. VLSI Syst.

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Abstract-In this work the electrical characteristics of Tunnel FET (TFET) devices are explored for energy harvesting frontend circuits with ultra-low power consumption. Compared to conventional thermionic technologies the improved electrical characteristics of TFET devices are expected to increase the power conversion efficiency (PCE) of front-end charge-pumps and rectifiers powered at sub-μW power levels. Under reverse bias conditions the TFET device presents particular electrical characteristics due to the different carrier injection mechanism. A negative differential resistance (NDR) is observed at low reverse bias and high drift diffusion (DD) current is observed at high reverse bias, thus degrading the efficiency of low-power front-end circuits and limiting their operation range. Therefore, in order to take full advantage of the TFET electrical characteristics in front-end energy harvesting circuits, different circuit approaches are required. In this work we propose and discuss different topologies for TFET-based charge-pumps and rectifiers for energy harvesting applications.Index Terms-Charge-Pump, Energy Harvesting, Passive Rectifier, Thermogenerator, Tunnel FET, Ultra-Low Power. I. INTRODUCTIONHE emerging Tunnel Field-Effect Transistor (TFET) has been considered an attractive alternative to replace conventional CMOS technologies in ultra-low power and energy efficient computing applications [1][2][3][4][5][6][7]. In contrast to thermionic devices, the high energy filtering of the band -toband tunneling (BTBT) carrier injection mechanism characterizes the TFET device with a sub-threshold slope (SS) below 60 mV/dec (at room temperature) and lower leakage current.Simulation results show that TFET devices present better electrical characteristics than conventional technologies at sub-0.25 V operation [8]. On the other hand, TFETs conduct less current at voltages around 1 V, and thereby their use is envisioned for low voltage, low performance applications.T his paragraph of the first footnote will contain the date on which you submitted your paper for review. This work was supported by the Portuguese funding institution FCT (Fundação para a Ciência e a T ecnologia) and Spanish Ministry of Economy (MINECO) and ERDF funds through project T EC2013-45638-C3-2-R (Maragda).D. Cavalheiro and F. Moll are with the Department of Electronic Engineering, Polytechnic University of Catalonia, Jordi Girona, 31, 08034, Barcelona, francesc.moll@upc.edu).S. Valtchev is with the Department of Electrical Engineering, New University of Lisbon FCT , Quinta da T orre, 2829-516 Caparica, Portugal (e-mail: ssv@fct.unl.pt).As energy harvesting transducers produce low output voltage values from typical ambient conditions with small temperature gradients (case of thermogenerators) and low RF power (antennas powered by electromagnetic radiation), energy conversion circuits are required to increase these values for use by the electronic systems . Under extreme low voltage scenarios, TFETs appear as an interesting device to implement the...

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Section: Tfet-based Charge-pumpsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Insights Into Tunnel FET-Based Charge Pumps and Rectifiers for Energy Harvesting Applications

Cavalheiro

Moll

Valtchev

2017

IEEE Trans. VLSI Syst.

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“…5 for the biasing condition V GS =2V DS . The simulation results of the TFET device are based on heterojunction structure with III-V materials [9][10]. As expressed in (1) the use of materials with low energy band gap materials can increase the BTBT probability of the TFET device, thus increasing the tunneling current at similar voltage values compared to the use of higher energy band gap materials as silicon.…”

Section: Tfet In Energy Harvesting Passive Rectifiersmentioning

confidence: 99%

“…6 is presented. Both rectifiers are simulated with GaSb-InAs Tunnel FET devices [9][10] (characteristics presented in Fig. 5).…”

Section: B Second Region Of Operation (Rf -> Rf + )mentioning

confidence: 99%

Novel UHF Passive Rectifier with Tunnel FET Devices

Cavalheiro

Moll

Valtchev

2015

2015 IEEE Computer Society Annual Symposium on VLSI

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Abstract-The increase of the losses in UHF passive rectifiers with Tunnel FET devices at large RF AC amplitudes are mainly due to the high reverse current inherent of this technology when subjected to high reverse bias conditions. In this work, a new UHF passive rectifier circuit is proposed, with the purpose of reducing the reverse current suffered by Tunnel FET devices at large RF AC amplitudes. Compared to the differential-drive rectifier, the proposed topology is shown to improve the output voltage and power conversion efficiency at similar RF voltage/power conditions as well as the transmission distance for RFID applications.

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“…Recently, many different TFET SRAMs have been explored to overcome this limitation [14][15][16][17]. By comparing those designs on several aspects (e.g.…”

Section: 2tunneling Field Effect Transistors (Tfets)mentioning

confidence: 99%

Hybrid CMOS-TFET based register files for energy-efficient GPGPUs

Tan

2013

International Symposium on Quality Electronic Design (ISQED)

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State-of-the-art General-Purpose computing on Graphics Processing Unit (GPGPU) is facing severe power challenge due to the increasing number of cores placed on a chip with decreasing feature size. In order to hide the long latency operations, GPGPU employs the fine-grained multithreading among numerous active threads, leading to the sizeable register files with massive power consumption. Exploring the optimal power savings in register files becomes the critical and first step towards the energyefficient GPGPUs. The conventional method to reduce dynamic power consumption is the supply voltage scaling, and the inter-bank tunneling FETs (TFETs) are the promising candidates compared to CMOS for low voltage operations regarding to both leakage and performance. However, always executing at the low voltage (so that low frequency) will result in significant performance degradation. In this study, we propose the hybrid CMOS-TFET based register files. To optimize the register power consumption, we allocate TFET-based registers to threads whose execution progress can be delayed to some degree to avoid the memory contentions with other threads, and the CMOS-based registers are still used for threads requiring normal execution speed. Our experimental results show that the proposed technique achieves 30% energy (including both dynamic and leakage) reduction in register files with little performance degradation compared to the baseline case equipped with naive power optimization technique.

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Variation-tolerant ultra low-power heterojunction tunnel FET SRAM design

Cited by 119 publications

References 19 publications

Insights Into Tunnel FET-Based Charge Pumps and Rectifiers for Energy Harvesting Applications

Insights Into Tunnel FET-Based Charge Pumps and Rectifiers for Energy Harvesting Applications

Novel UHF Passive Rectifier with Tunnel FET Devices

Hybrid CMOS-TFET based register files for energy-efficient GPGPUs

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