Variation of the resistivity and chemical composition of CVD graphene under annealing in a reductive atmosphere

Толочко, О. В.; Larionova, Tatiana; Koltsova, Tatiana S.; Kozlova, Mariya; Bobrynina, Elizaveta; Martynova, O. A.; Gasumyants, V. É.

doi:10.1088/1742-6596/816/1/012012

Cited by 4 publications

(3 citation statements)

References 13 publications

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“…Interestingly, the combination of all three effects ( T + A + F ) shows a maximum Δ R s of 80%, whereas other combinations ( A + T ), ( F + T ) and ( A + F ) show Δ R s of 79%, 70% and 64%, respectively. The above methods also have been applied to graphene prepared by continuous CH 4 flow in literature, including TFSA doping, 19,33,67 annealing, 35,36 and stacking, 7,23,24 as shown in ESI Table S1. † The reduction is R s value is 30–75%, 7–30% and 50–58% for TFSA doping, annealing and stacking, respectively, which are comparatively less with reference to pulsed-grown graphene.…”

Section: Resultsmentioning

confidence: 99%

“…Recently, a new growth technique has been introduced by Han et al 31 which involves cyclic injection of carbon precursor (CH 4 ) during chemical vapor deposition (CVD) to suppress the multilayer patches generally formed using continuous CH 4 flow, thereby improving both the optical and electrical performance of graphene. Similarly, other approaches, such as trifluoromethanesulfonimide (TFSA) doping, 19,32–34 post annealing, 35,36 and flattening of graphene films 37 have been carried out to reduce the R s of graphene. However, no systematic study exists so far that combines all the aforementioned approaches, which is highly desired to achieve superior graphene film suitable for the transparent conducting electrode.…”

Section: Introductionmentioning

confidence: 99%

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Pulsed-grown graphene for flexible transparent conductors

Nayak

2019

Nanoscale Adv.

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In the race to find novel transparent conductors for next-generation optoelectronic devices, graphene is supposed to be one of the leading candidates, as it has the potential to satisfy all future requirements.However, the use of graphene as a truly transparent conductor remains a great challenge because its lowest sheet resistance demonstrated so far exceeds that of the commercially available indium tin oxide.The possible cause of low conductivity lies in its intrinsic growth process, which requires further exploration. In this work, I have approached this problem by controlling graphene nucleation during the chemical vapor deposition process as well as by adopting three distinct procedures, including bis(trifluoromethanesulfonyl)amide doping, post annealing, and flattening of graphene films. Additionally, van der Waals stacked graphene layers have been prepared to reduce the sheet resistance effectively. I have demonstrated an efficient and flexible transparent conductor with the extremely low sheet resistance of 40 U sq À1 , high transparency (T r $90%), and high mechanical flexibility, making it suitable for electrode materials in future optoelectronic devices.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Pulsed-grown graphene for flexible transparent conductors

Nayak

2019

Nanoscale Adv.

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“…[17,18] However, there are residues that will influence the electrical performance of transferred graphene, [19] and thermal annealing higher than 200 C is found as an effective method to remove most of them. [20] Compared to vacuum annealing, it is found that thermal annealing in a reductive atmosphere can remove the functional groups adsorbed from the ambient atmosphere, [21] and results in a Raman shift to n-type doping side due to the removal as well as the strong electron interaction between graphene and SiO 2 /Si substrate. [22] Moreover, after thermal annealing, the compression caused by the mismatch between thermal expansion coefficients of graphene and the substrate, as well as other effects such as the increased homogeneity of conductivity in graphene, cannot be ignored.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Thermal Annealing Effect on Bilayer Graphene by Isotope‐Labeling‐Assisted Raman Spectroscopy

Liu

Zhang

Jin

et al. 2020

Physica Status Solidi (b)

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Thermal annealing is a necessary step in the standard fabrication process of graphene for removal of polymethyl methacrylate (PMMA). The influence of thermal annealing on monolayer graphene (MLG) has been intensively studied, but that on bilayer graphene (BLG) remains unclear. A key challenge for such investigation is that the Raman spectroscopic method that is usually used on MLG encounters the overlap of featured peaks from the two graphene layers. Herein, the independent featured Raman peaks of the two layers can be detected using isotope‐labeled BLG samples, so that the shift in each spectrum affected by the annealing process can be monitored. Results show that there are compression and doping in MLG and twisted‐stacked BLG (t‐BLG) after annealing. Compared with that in MLG, the annealing‐induced doping level in the adlayer of t‐BLG is lower, and in the top layer of t‐BLG, only a low level of doping and compression remains after thermal annealing. Moreover, the annealing‐induced doping level in AB‐stacked BLG (AB‐BLG) is almost the same with that in t‐BLG, and the originally induced compression during a transfer process is unloaded. These results can provide more understanding for the post‐treatment of graphene on substrates and the characterization of each layer.

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Intumescent Nanocoatings for Fire Safety

Zybina

Gravit

2020

Intumescent Coatings for Fire Protection of Building Structures and Materials

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Variation of the resistivity and chemical composition of CVD graphene under annealing in a reductive atmosphere

Cited by 4 publications

References 13 publications

Pulsed-grown graphene for flexible transparent conductors

Pulsed-grown graphene for flexible transparent conductors

Investigation of Thermal Annealing Effect on Bilayer Graphene by Isotope‐Labeling‐Assisted Raman Spectroscopy

Intumescent Nanocoatings for Fire Safety

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