Variation of the confinement potential of a quasi-one-dimensional electron gas by lateral p-n junctions

Abstract

Articles you may be interested inFarinfrared study of a quasionedimensional electron gas formed on (100)GaAs facets with hole gas sidegates on a (311)A GaAs substrate

Focused ion beam patterned Hall bars and Ohmic columns embedded in molecular-beam-epitaxial-grown GaAs/AlGaAs

“…Limited success can be achieved through a combination of epitaxial growth followed by a growth interrupt for surface modification e.g., ex situ mesa etch or high-energy ion implantation before a subsequent regrowth stage. 1,2 The technique of shadow masking may also be employed for the formation of laterally graded doped structures. 3 These methods, though proven viable, possess numerous inherent drawbacks ranging from a lack of flexibility to low yield ͑''one off success''͒.…”

Surface decontamination of patterned GaAs substrates for molecular beam epitaxy regrowth using a hydrogen radical source

“…9,10 This improvement in the performance of the resonant tunneling device, by hydrogen radical cleaning of the patterned substrate surface, has been achieved at a cleaning temperature of only 466°C. These results indicate that not only is hydrogen radical cleaning effective at contaminant removal but results in a cleaned surface suitable for regrowth of sensitive device structures.…”

Far-infrared study of a quasi-one-dimensional electron gas formed on (100)GaAs facets with hole gas sidegates on a (311)A GaAs substrate

“…Further details related to device fabrication may be found in Ref. 8. After wedging the substrate to avoid interference effects in FIR CR transmission measurements, the angular dependence of Shubnikov deHaas ͑SdH͒ oscillations suggested that the plane of the electron gas made an angle of 19͑Ϯ1͒°with the wedged substrate.…”