Variation of structural and optical properties of TiO2 films prepared by DC magnetron sputtering method with annealing temperature

Reactively-sputtered super-hydrophilic ultra-thin titania films deposited at 120 °C

“…The above results emphasize the importance of the O 2 fraction in the O 2 /Ar working gas during reactive sputter deposition of titania for obtaining super-hydrophilic surfaces. In the past [14][15][16][17][18][19], the material crystal structure has been shown to be a critical parameter affecting surface contact angles; in particular, anatase titania films were required for very low contact angle surfaces. However, it should be made clear that previous studies reporting on super-hydrophilic titania thin films concern RF sputter deposition using ceramic TiO 2 targets [13, 28] and a pure Ar working gas.…”

“…amorphous film. At 400 °C, the characteristic Bragg peak of the (101) crystallographic planes of the anatase crystal structure appears at 25.30°, indicating at least a partial crystallization[14]. Increasing the deposition temperature to 500 °C results in the appearance of the rutile crystal structure, as revealed by the characteristic Bragg peak at 27.5°, while the anatase phase disappears.…”

Tunable structure of TiO2 deposited by DC magnetron sputtering to adsorb Cr (VI) and Fe (III) from water

“…Deposition of thin films via sputtering is a great option for modifying the structural properties of semiconductors, and it is possible to explore the depositional conditions to change the final properties of the film. With the sputtering technique, changing the amount of carrier gas inside the chamber, the gases used in the deposit, the power density, and the working pressure for deposition is feasible [ [31] , [32] , [33] , [34] ]. Among these parameters, the working pressure is one of the best options for modifying the structural, optical, and morphological properties of thin films, as the ionization levels of the species inside the chamber increase with increasing working pressures [ 35 , 36 ].…”

“…The working pressure affects the path and energy through which the material species collide with the substrate inside the chamber, giving rise to preferential planes in the crystalline structure [ 35 , [37] , [38] , [39] ]. However, the presence of more than two TiO 2 phases is very common even with changes in the deposition conditions (see Table S2 ) [ [32] , [33] , [34] , [40] , [41] , [42] , [43] , [44] , [45] , [46] , [47] , [48] , [49] ].…”