Variation of phonon coupling factors in the photoluminescence of cadmium telluride by variable excitation power

Feng, Zhe Chuan; Li, Qingxuan; Wan, Lingyu; Xu, Gu

doi:10.1364/ome.7.000808

Cited by 4 publications

(2 citation statements)

References 32 publications

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“…With a rise in excitation power density, a greater number of electron-hole pairs are generated, and the electrons and holes located at k ≠ 0 also recombine, thus contributing to the observed peak width [48]. This phenomenon is observed in numerous materials [49,50]. Figure 6 illustrates the evolution of the PL spectra at 17 K for various power excitation densities.…”

Section: Resultsmentioning

confidence: 98%

The Wannier-Mott Exciton, Bound Exciton, and Optical Phonon Replicas of Single-Crystal GaSe

Le,

Huong,

Nguyen

et al. 2024

Crystals

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We report the absorption and photoluminescence spectra of GaSe single crystals in the near-edge region. The temperatures explored the range from 17 to 300 K. Specifically, at a temperature of 17 K, the photoluminescence spectrum reveals an interesting phenomenon: the Wannier-Mott exciton separates into two states. These states are a triplet state with an energy of 2.103 eV and a singlet state with an energy of 2.109 eV. The energy difference between these two states is 6 meV. Furthermore, the bound exciton (BX) can be localized at an energy of 2.093 eV. It is worth noting that its phonon replicas (BX-nLO) can be clearly distinguished up to the fourth order. Interestingly, the energy gaps between these replicas exhibit a consistent spacing of 7 ± 0.5 meV. This intriguing finding suggests a high-quality crystalline structure as well as a strong coupling between the phonon and BX-nLO. Additionally, at low temperatures, both the ground state (n = 1) at 2.11 eV and the excited state (n = 2) at 2.127 eV of free excitons can be observed.

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Section: Resultsmentioning

confidence: 98%

The Wannier-Mott Exciton, Bound Exciton, and Optical Phonon Replicas of Single-Crystal GaSe

Le,

Huong,

Nguyen

et al. 2024

Crystals

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“…Among other semiconductors, the intrinsic binary InSb possesses the highest electron mobility (∼7.8 × 10 4 cm 2 /V•s), higher breakdown field (∼10 3 V/cm), high saturated electron drift velocity (∼5 × 10 7 cm/s), small effective mass (m * e ∼0.013 m o ), lowest energy band gap E g ∼0.18 eV (at 300 K), and ballistic length up to ∼0.7 μm (at 300 K). e InSb material can be used as a lattice-matched substrate for epitaxial growth of CdTe [34] and other relevant heterostructures and superlattices [35]. e InSb-based ternary as well as quaternary alloys are equally valuable for realizing midwavelength infrared detectors [36][37][38][39].…”

Section: Introductionmentioning

confidence: 99%

Synchrotron Radiation X‐Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition

Qian

Liang

Luo

et al. 2018

Advances in Materials Science and Engineering

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A series of ultrathin InSb films grown on GaAs by low-pressure metalorganic chemical vapor deposition with different V/III ratios were investigated thoroughly using spectroscopic ellipsometry (SE), X-ray diffraction, and synchrotron radiation X-ray absorption spectroscopy. The results predicted that InSb films on GaAs grown under too high or too low V/III ratios are with poor quality, while those grown with proper V/III ratios of 4.20–4.78 possess the high crystalline quality. The temperature-dependent SE (20–300°C) and simulation showed smooth variations of SE spectra, optical constants (n, k, e1, and ε2), and critical energy points (E1, E1+Δ1, E′0, E2, and E′1) for InSb film when temperature increased from 20°C to 250°C, while at 300°C, large changes appeared. Our study revealed the oxidation of about two atomic layers and the formation of an indium-oxide (InO) layer of ∼5.4 nm. This indicates the high temperature limitation for the use of InSb/GaAs materials, up to 250°C.

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Large-area epitaxial CdTe(100) films grown on GaAs(100) substrates: MBE growth and substrate temperature effect

Hwang

Ngugen

Choi

et al. 2021

J. Korean Phys. Soc.

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Variation of phonon coupling factors in the photoluminescence of cadmium telluride by variable excitation power

Cited by 4 publications

References 32 publications

The Wannier-Mott Exciton, Bound Exciton, and Optical Phonon Replicas of Single-Crystal GaSe

The Wannier-Mott Exciton, Bound Exciton, and Optical Phonon Replicas of Single-Crystal GaSe

Synchrotron Radiation X‐Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition

Large-area epitaxial CdTe(100) films grown on GaAs(100) substrates: MBE growth and substrate temperature effect

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