2021
DOI: 10.1109/jeds.2021.3112217
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Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier

Abstract: Characterization of broadband noise of MOSFETs from room temperature down to 120 K in fine temperature steps is presented. A MOSFET is mounted on a reusable printed circuit board vehicle with a built-in low-noise amplifier, and the vehicle is loaded into a cryogenic chamber. The vehicle allows noise measurement in the frequency range from 50 kHz to 100 MHz. At low frequencies, it enables extraction of activation energies associated with electron trapping sites. At high frequencies, as has been suggested by noi… Show more

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Cited by 7 publications
(11 citation statements)
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“…= 0.8 V with 𝑉 " = 0.1 V, and are 0.44, 0.36, and 0.29, respectively. The decrease in 𝐹 down to 4 K were observed, being consistent with the previous report [4].…”
Section: E Fano Factorsupporting
confidence: 93%
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“…= 0.8 V with 𝑉 " = 0.1 V, and are 0.44, 0.36, and 0.29, respectively. The decrease in 𝐹 down to 4 K were observed, being consistent with the previous report [4].…”
Section: E Fano Factorsupporting
confidence: 93%
“…As was reported experimentally in [4], MOSFETs ideally generate only thermal noise under a zero drain bias (𝑉 " = 0 V). Fig.…”
Section: Mosfet Noise Characterization a Pure Thermal Noisementioning
confidence: 62%
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